Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-3.0 Electrical Characteristics
(V
IN
=4.0V, T
A
=25
o
C, C
IN
=1µF, C
OUT
=1µF,
Bold
typeface applies over -40
o
C≤T
J
≤85
o
C, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Load Regulation
Line Regulation
Symbol
V
OUT
V
IN
I
OUT(MAX)
V
RLOAD
V
RLINE
V
IN
-V
OUT
=1V, V
OUT
=2.94V
V
IN
=4.0V
1mA≤I
OUT
≤300mA
4.0V≤V
IN
≤6V
I
OUT
=30mA
I
OUT
=10mA
Dropout Voltage
V
DROP
I
OUT
=100mA
I
OUT
=300mA
Quiescent Current
Standby Current
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
Short Current Limit
RMS Output Noise
CE "High" Voltage
CE "Low" Voltage
Thermal Shutdown
Thermal Shutdown Hyster-
esis
I
Q
I
STD
PSRR
(∆V
OUT
/V
OUT
)/∆T
I
SHORT
V
NOISE
V
IN
=4.0V, I
OUT
=0mA
V
IN
=4.0V
V
CE
in OFF mode
Ripple 0.5Vp-p
V
IN
=4.0V
I
OUT
=30mA
V
OUT
=0V
10Hz
≤f≤100kHz
CE input voltage "High"
CE input voltage "Low"
160
25
1.5
0.4
f=100Hz
f=1KHz
300
360
12
1
6.5
65
200
60
0.01
65
65
10
100
300
90
1.0
mV
Conditions
V
IN
=4.0V
1mA≤I
OUT
≤30mA
Min
2.94
Typ
3.0
Max
3.06
6
Unit
V
V
mA
mV
mV
µ
A
µ
A
dB
dB
ppm/
o
C
mA
±
100
50
50
µ
Vrms
V
V
o
C
o
C
May. 2010 Rev. 1. 4
9
BCD Semiconductor Manufacturing Limited
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
