Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2125
Electrical Characteristics (Continued)
AP2125-3.3 Electrical Characteristics
≤TJ≤
(VIN=4.3V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC 85oC, unless otherwise specified.)
Parameter
Symbol
Conditions
VIN=4.3V
1mA≤IOUT≤30mA
Min
Typ
Max
Unit
VOUT
Output Voltage
3.234
3.3
3.366
V
Input Voltage
VIN
6
V
Maximum Output Current
IOUT(MAX)
VIN-VOUT=1V, VOUT=3.23V
300
360
13
mA
VIN=4.3V
VRLOAD
Load Regulation
Line Regulation
mV
mV
1mA≤IOUT≤300mA
4.3V≤VIN≤6V
IOUT=30mA
VRLINE
1
IOUT=10mA
IOUT=100mA
IOUT=300mA
6.5
65
10
VDROP
Dropout Voltage
mV
100
300
200
IQ
VIN=4.3V, IOUT=0mA
Quiescent Current
Standby Current
60
90
µA
µA
VIN=4.3V
ISTD
0.01
1.0
VCE in OFF mode
f=100Hz
f=1KHz
65
65
dB
dB
Ripple 0.5Vp-p
VIN=4.3V
Power Supply
Rejection Ratio
PSRR
Output Voltage
Temperature Coefficient
ppm/oC
(∆VOUT/VOUT)/∆T IOUT=30mA
±100
Short Current Limit
RMS Output Noise
ISHORT
VNOISE
VOUT=0V
50
50
mA
µVrms
V
10Hz ≤f≤100kHz
CE "High" Voltage
CE "Low" Voltage
Thermal Shutdown
CE input voltage "High"
CE input voltage "Low"
1.5
0.4
V
oC
oC
160
25
Thermal Shutdown Hyster-
esis
May. 2010 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
10
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
