Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2128
Electrical Characteristics (Continued)
(AP2128-1.0V/1.2V/1.5V/1.8V, VINmin.=2.5V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC
≤TA≤
85oC, unless oth-
erwise specified.)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VIN=2.5V
98%×
VOUT
102%×
VOUT
VOUT
Output Voltage
V
1mA≤IOUT≤300mA
Input Voltage
VIN
2.5
6
V
VIN=2.5V,
IOUT(MAX)
Maximum Output Current
300
400
450
mA
V
OUT=98%×VOUT
VIN=2.5V
IN=2.5V,
1mA≤IOUT≤300mA
VIN=2.5V to 6V
ILIMIT
Current Limit
mA
∆VOUT
/(∆IOUT*VOUT
V
Load Regulation
0.6
%/A
)
∆VOUT
/(∆VIN*VOUT
Line Regulation
Dropout Voltage
0.06
%/V
mV
)
IOUT=30mA
VOUT=1.0V, IOUT=300mA
1400
1200
900
600
60
1500
1300
1000
700
V
OUT=1.2V, IOUT=300mA
VOUT=1.5V, IOUT=300mA
OUT=1.8V, IOUT=300mA
VDROP
V
Quiescent Current
Standby Current
IQ
VIN=2.5V, IOUT=0mA
90
µA
µA
VIN=2.5V,
ISTD
0.1
1.0
VSHUTDOWN in off mode
f=100Hz
68
68
54
dB
dB
dB
Ripple 1Vp-p
VIN=3V
Power Supply
Rejection Ratio
PSRR
f=1KHz
f=10KHz
Output Voltage
Temperature Coefficient
(∆VOUT/VOUT
)
≤TA≤
OUT=30mA, -40oC 85oC
ppm/oC
±100
I
/∆T
Short Current Limit
Soft Start Time
ISHORT
VOUT=0V
50
50
mA
tUP
µs
Shutdown "High" Voltage
Shutdown "Low" Voltage
Shutdown input voltage "High"
Shutdown input voltage "Low"
1.5
0
6
V
V
0.4
VOUT Discharge MOSFET
RDS(ON)
Shutdown input voltage "Low"
60
3
Ω
Shutdown Pull Down Resis-
tance
MΩ
oC
oC
Thermal Shutdown
165
30
Thermal Shutdown Hysteresis
Thermal Resistance
oC/W
θJC
SOT-23-5
150
Sept. 2010 Rev. 2.0
BCD Semiconductor Manufacturing Limited
7
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
