Data Sheet
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
AP2126
Electrical Characteristics (Continued)
(AP2126-3.3V, C
IN
=1µF, C
OUT
=1µF, Bold typeface applies over -40
o
C≤T
J
≤85
o
C, unless otherwise specified.)
Parameter
Output Voltage
Input Voltage
Maximum Output Current
Load Regulation
Line Regulation
Dropout Voltage
Quiescent Current
Standby Current
Symbol
V
OUT
V
IN
I
OUT(MAX)
∆V
OUT
/(∆I
OUT*
V
OUT
)
∆V
OUT
/(∆V
IN
*V
OUT
)
V
DROP
I
Q
I
STD
V
IN
-V
OUT
=1V,
1mA≤I
OUT
≤300mA
V
OUT
+0.5V≤V
IN
≤6V
I
OUT
=30mA
V
OUT
=3.3V, I
OUT
=300mA
V
IN
=V
OUT
+1V, I
OUT
=0mA
V
IN
=V
OUT
+1V,
V
SHUTDOWN
in off mode
f=100Hz
Power Supply
Rejection Ratio
Output Voltage
Temperature Coefficient
Output Current Limit
Short Current Limit
Soft Start Time
RMS Output Noise
Shutdown "High" Voltage
Shutdown "Low" Voltage
V
OUT
Discharge MOSFET
R
DS(ON)
Shutdown Pull Down Resis-
tance
Thermal Shutdown
Thermal Shutdown Hysteresis
PSRR
Ripple 1Vp-p
V
IN
=V
OUT
+1V
f=1KHz
f=10KHz
(∆V
OUT
/V
OUT
)
/∆T
I
LIMIT
I
SHORT
t
UP
V
NOISE
T
A
=25
o
C, 10Hz
≤f≤100kHz
Shutdown input voltage "High"
Shutdown input voltage "Low"
Shutdown input voltage "Low"
1.5
0
60
3
165
30
I
OUT
=30mA, -40
o
C≤T
J
≤85
o
C
V
IN
-V
OUT
=1V,
V
OUT
=0.98*V
OUT
V
OUT
=0V
170
60
0.1
65
65
45
450
0.6
0.06
300
90
1.0
Conditions
V
IN
=V
OUT
+1V
1mA≤I
OUT
≤300mA
Min
98%*
V
OUT
Typ
Max
102%*
V
OUT
6
Unit
V
V
mA
%/A
%/V
mV
µ
A
µ
A
dB
dB
dB
ppm/
o
C
mA
mA
±
100
400
50
50
60
6
0.4
µ
s
µ
Vrms
V
V
Ω
M
Ω
o
C
o
C
Jun. 2008 Rev. 1. 1
5
BCD Semiconductor Manufacturing Limited
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
