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AP2120N-2.5TRG1 参数 Datasheet PDF下载

AP2120N-2.5TRG1图片预览
型号: AP2120N-2.5TRG1
PDF下载: 下载PDF文件 查看货源
内容描述: 高速度,超低噪音LDO稳压器 [HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR]
分类和应用: 稳压器调节器光电二极管输出元件
文件页数/大小: 21 页 / 659 K
品牌: BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
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Data Sheet
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
Absolute Maximum Ratings (Note 1)
Parameter
Input Voltage
Enable Input Voltage
Output Current
Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10sec)
Thermal Resistance (Note 2)
ESD (Human Body Model)
ESD (Machine Model)
Symbol
V
IN
V
CE
I
OUT
T
J
T
STG
T
LEAD
θ
JA
ESD
ESD
Value
6.5
-0.3 to V
IN
+0.3
300
150
-65 to 150
260
250
2000
200
Unit
V
V
mA
o
C
o
C
o
AP2120
C
o
C/W
V
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-
tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, T
J(max),
the junction-to-ambient thermal resistance,
θ
JA,
and the ambient tem-
perature, T
A.
The maximum allowable power dissipation at any ambient temperature is calculated using: P
D(max)
=(T
J(max)
-
T
A
)/θ
JA.
Exceeding the maximum allowable power dissipation will result in excessive die temperature.
Recommended Operating Conditions
Parameter
Input Voltage
Operating Junction Temperature Range
Symbol
V
IN
T
J
Min
2
-40
Max
6
85
Unit
V
o
C
Nov. 2009 Rev. 1. 0
5
BCD Semiconductor Manufacturing Limited