Data Sheet
600mA CMOS LDO REGULATOR WITH ENABLE
AP2111
Electrical Characteristics (Continued)
AP2111-4.8 Electrical Characteristic (Note 2) (Only for SOT-223)
VIN=5.5V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40°C≤TA≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VOUT
×98.5%
VOUT
×101.5%
Output Voltage
VOUT
VIN =5.5V, 1mA ≤ IOUT ≤ 30mA
4.8
V
VIN=5.5V, VOUT=4.751V to
4.850V
Maximum Output Current
Load Regulation
IOUT(Max)
600
mA
%/A
%/V
(△VOUT/VOUT
)
)
VIN=5.5V, 1mA ≤ IOUT ≤600mA
5.5V≤VIN≤6V, IOUT=30mA
IOUT =10mA
0.2
0.02
5
△IOUT
(△VOUT/VOUT
△VIN
Line Regulation
8
Dropout Voltage
VDROP
mV
IOUT =300mA
100
200
55
200
400
80
IOUT=600mA
Quiescent Current
Standby Current
IQ
VIN=5.5V, IOUT=0mA
VIN=5.5V, VEN in OFF mode
µA
µA
ISTD
0.01
65
1.0
f=100Hz
f=1kHz
Ripple 0.5Vp-p
VIN=5.5V,
Power Supply Rejection
Ratio
PSRR
dB
I
OUT=100mA
65
Output Voltage
Temperature Coefficient
(△VOUT/VOUT
)
IOUT=30mA
TA=-40°C to 85°C
±100
ppm/°C
△T
Short Current Limit
RMS Output Noise
ISHORT
VNOISE
TOTSD
VOUT=0V
50
50
mA
No Load, 10Hz ≤ f ≤100kHz
µVRMS
Thermal
Shutdown
160
Temperature
Thermal
Hysteresis
Shutdown
°C
THYOTSD
30
Thermal Resistance
(Junction to Case)
SOT-223
50.9
ꢀθJC
Note 2: To prevent the short circuit current protection feature from being prematurely activated, the input voltage
must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jan. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
10
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
