Preliminary Datasheet
600mA CMOS LDO REGULATOR WITH ENABLE AP2112
Electrical Characteristics (Continued)
AP2112-3.3 Electrical Characteristic (Note 2)
VIN=4.3V, CIN=1µF (Ceramic), COUT=1µF (Ceramic), Typical TA = 25°C, Bold typeface applies over -40°C≤TJ≤85°C ranges,
unless otherwise specified (Note 3).
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VOUT
*98.5%
VOUT
*101.5%
Output Voltage
VOUT
VIN =4.3V, 1mA ≤ IOUT ≤ 30mA
3.3
V
VIN=4.3V, VOUT=3.251V to
3.350V
Maximum Output Current
Load Regulation
IOUT(MAX)
600
mA
%/A
%/V
(△VOUT/VOUT)/
△IOUT
(△VOUT/VOUT)/
△VIN
VIN=4.3V, 1mA ≤ IOUT ≤600mA
4.3V≤VIN≤6V, IOUT=30mA
IOUT =10mA
0.2
0.02
5
Line Regulation
±0.1
8
Dropout Voltage
VDROP
mV
IOUT =300mA
125
250
55
200
400
80
IOUT=600mA
Quiescent Current
Standby Current
IQ
VIN=4.3V, IOUT=0mA
VIN=4.3V, VEN in OFF mode
µA
µA
ISTD
0.01
65
1.0
f=100Hz
f=1KHz
Ripple 0.5Vp-p
VIN=4.3V,
IOUT=100mA
Power Supply Rejection
Ratio
PSRR
dB
65
Output Voltage
Temperature Coefficient
IOUT=30mA
±100
(△VOUT/VOUT)/ △T
ppm
TA =-40°C to 85°C
VOUT=0V
Short Current Limit
RMS Output Noise
VEN High Voltage
VEN Low Voltage
ISHORT
VNOISE
VIH
50
50
mA
No Load, 10Hz ≤ f ≤100kHz
Enable logic high, regulator on
Enable logic low, regulator off
No Load
µVRMS
1.5
0
6.0
0.4
V
VIL
Start-up Time
TS
20
3.0
60
µs
MΩ
Ω
EN Pull Down Resistor
VOUT Discharge Resistor
RPD
RDCHG
TOTSD
Set EN pin at Low
Thermal
Temperature
Thermal
Hysteresis
Shutdown
160
°C
Shutdown
THYOTSD
25
96
75
47
SOT-23-5
SOIC-8
Thermal Resistance
°C /W
θJC
SOT-89-5
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA =25°C. Over temperature specifications guaranteed by design only.
Aug. 2010 Rev 1. 0
BCD Semiconductor Manufacturing Limited
10