Preliminary Datasheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2115
Electrical Characteristics (Continued)
AP2115-3.3 Electrical Characteristics (Note 2)
VIN=4.3V, CIN=4.7µF (Ceramic), COUT=4.7µF (Ceramic), Typical TA=25°C, Bold typeface applies over -40OC≤TJ≤85OC
ranges, unless otherwise specified (Note 3).
Parameter
Symbol
Test Conditions
Min Typ Max Unit
98.5%
×VOUT
3.3 101.5%
×VOUT
Output Voltage
VOUT
VIN =4.3V, 1mA ≤ IOUT ≤ 30mA
V
Maximum Output Current
Load Regulation
IOUT(MAX)
VIN =4.3V, VOUT=3.25V to 3.35V
VIN=4.3V, 1mA ≤ IOUT ≤1A
4.3V≤VIN≤6V, IOUT=30mA
IOUT=1A
1
A
△VOUT/VOUT
△IOUT
△VOUT/VOUT
△VIN
0.2
0.02
450
65
1
%/A
%/V
mV
µA
Line Regulation
-0.1
0.1
750
90
Dropout Voltage
VDROP
IQ
Quiescent Current
VIN=4.3V, IOUT=0mA
Ripple 1Vp-p
f=100Hz
65
65
Power Supply Rejection
Ratio
PSRR
VIN=4.3V,
dB
f=1KHz
IOUT=100mA
Output Voltage
Temperature Coefficient
△VOUT/VOUT
△T
I
OUT=30mA
±30
50
ppm/°C
mA
Short Current Limit
RMS Output Noise
VEN High Voltage
VEN Low Voltage
Standby Current
ISHORT
VNOISE
VIH
VOUT=0V
10Hz ≤ f ≤100kHz (No load)
Enable logic high, regulator on
Enable logic low, regulator off
VIN=3.5V, VEN in OFF mode
No Load
30
µVRMS
1.5
V
VIL
0.4
1.0
ISTD
tS
0.01
20
µA
µs
Start-up Time
EN Pull Down Resistor
VOUT Discharge Resistor
RPD
3.0
60
MΩ
RDCHG
Set EN pin at Low
Ω
Thermal
Temperature
Shutdown
TOTSD
160
°C
Thermal
Hysteresis
Shutdown
THYOTSD
25
74.6
47
SOIC-8
Thermal Resistance
°C/W
θJC
SOT-89-5
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Jul. 2011 Rev 1. 1
BCD Semiconductor Manufacturing Limited
9
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
