Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
Electrical Characteristics (Continued)
V
CC
=14.5V, T
A
=-25
o
C to 125
o
C, unless otherwise specified.
Parameter
Current Sense Section
Input Bias Current
Current Sense Offset Volt-
age
Current Sense Reference
Clamp
Delay to Output
I
CS
V
CS-OFFSET
V
CS-CLAMP
t
d(H-L)
V
CS
=0V
V
MULT
=0V
V
MULT
=2.5V
V
COMP
=Upper Clamp Voltage,
V
MULT
=2.5V
1.5
-0.05
30
5
1.6
175
1.7
V
ns
-1.0
µA
mV
Symbol
Test Conditions
Min
Typ
Max
Unit
AP1661A
Zero Current Detection Section
Input Threshold Voltage,
V
ZCD
Rising Edge
Hysteresis Voltage
Upper Clamp Voltage
Lower Clamp Voltage
Source Current Capability
Sink Current Capability
Sink Bias Current
Disable Threshold
Disable Hysterisis
Restart Current After
Disable
Drive Output Section
Dropout Voltage
V
OH
V
OL
Output Voltage Rise Time
Output Voltage Fall Time
Output Clamp Voltage
UVLO Saturation
Output Over Voltage Section
OVP Triggering Current
Static OVP Threshold
Restart Timer
Restart Timer
t
START
70
150
400
µs
I
OVP
V
OVP_TH
35
2.1
40
2.25
45
2.4
µA
V
t
R
t
F
V
O-CLAMP
V
OS
I
GD-SOURCE
=200mA, V
CC
=12V
I
GD-SOURCE
=20mA, V
CC
=12V
I
GD-SINK
=200mA, V
CC
=12V
C
L
=1nF
C
L
=1nF
I
GD-SOURCE
=5mA, V
CC
=20V
V
CC
=0 to V
CC-ON
, I
SINK
=10mA
10
2.5
2
0.9
40
40
13
3
2.6
1.9
100
100
15
1.1
V
ns
ns
V
V
V
V
ZCD-R
V
ZCD-RTH
V
ZCD-H
V
ZCD-L
I
ZCD-SR
I
ZCD-SN
I
ZCD-B
V
ZCD-DIS
V
ZCD-HYS
I
ZCD-RES
V
ZCD
<V
DIS
; V
CC
>V
CC-OFF
-100
1V≤V
ZCD
≤4.5
V
150
(Note 2)
(Note 2)
I
ZCD
=20µA
I
ZCD
=3mA
I
ZCD
=-3mA
0.3
4.5
4.7
0.3
-3
3
2
200
100
-200
-300
250
2.1
0.5
5.1
5.2
0.65
0.7
5.9
6.1
1
-10
10
V
mA
mA
µA
mV
mV
µA
V
V
V
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Jul. 2009 Rev. 1. 0
6
BCD Semiconductor Manufacturing Limited
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
