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386M-E1 参数 Datasheet PDF下载

386M-E1图片预览
型号: 386M-E1
PDF下载: 下载PDF文件 查看货源
内容描述: 低电压音频功率放大器 [LOW VOLTAGE AUDIO POWER AMPLIFIER]
分类和应用: 放大器功率放大器
文件页数/大小: 11 页 / 165 K
品牌: BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
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Data Sheet
LOW VOLTAGE AUDIO POWER AMPLIFIER
Absolute Maximum Ratings (Note 1)
Parameter
Power Supply Voltage
Package Dissipation (Note 2)
Input Voltage
Junction Temperature
Storage Temperature Range
Symbol
V
CC
P
D
V
IN
T
J
T
STG
AZ386P
AZ386M
-0.4 to 0.4
150
-55 to 150
DIP-8 Soldering
(10 sec.)
SOIC-8 (15 sec.)
Thermal Resistance
θ
JA
DIP-8
SOIC-8
260
215
107
172
o
C/W
AZ386
Value
18
1.25
0.73
Unit
V
W
W
V
o
o
C
C
C
Soldering Information
o
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum
Ratings" for extended periods may affect device reliability.
Note 2: For operation in ambient temperatures (T
A
) above 25
o
C, the device must be derated based on a 150
o
C
maximum junction temperature and 1) a thermal resistance of 107
o
C/W junction to ambient for the Dual-in-Line
package and 2) a thermal resistance of 172
o
C/W for the small outline package.
Recommended Operating Conditions
Parameter
Operating Temperature Range
Min
0
Max
70
Unit
o
C
Oct. 2006 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
4