Data Sheet
CURRENT MODE PWM CONTROLLER
Electrical Characteristics (Continued)
Parameter
Symbol
Conditions
AP3842C/AP3844C
AP3843C/AP3845C
Min. Operation Voltage
(After Turn On)
PWM SECTION
Max. Duty Cycle
Min. Duty Cycle
Start-Up Current
Operating Supply Current
Zener Voltage
D(Max.)
D(Max.)
D(Min.)
I
ST
I
CC
(OPR)
V
Z
T
SHUT
T
HYS
Vpin3=Vpin2=0V
I
CC
=25mA
(Note 6)
(Note 6)
30
50
8
34
AP3842C/AP3843C
AP3844C/AP3845C
95
46
97
48
100
50
0
80
12
%
%
%
µA
mA
V
V
OPR
(Min.)
AP3842C/AP3844C
AP3843C/AP3845C
Min
15
7.8
8.5
7.0
Typ
16
8.4
10.0
7.6
Max
17
9.0
11.5
8.2
Unit
V
V
V
V
UNDER -VOLTAGE LOCKOUT SECTION
Start Threshold
V
TH
(ST)
AP384XC
TOTAL STANDBY CURRENT SECTION
OVER-TEMPERATURE PROTECT SECTION
Shutdown Temperature
Temperature Hysteresis
155
25
o
C
o
C
Note 4: Parameters are tested at trip point of latch with Vpin2 = 0.
Note 5: Here gain is defined as:
∆VPin
1
A=
, 0
≤
Vpin3
≤
0.8V
∆VPin
3
Note 6: These parameters, although guaranteed, are not 100% tested in production.
Note 7: This parameter is measured with RT=10k
Ω
to V
REF,
it contributes 0.3mA of current to the measured value.
So the total current flowing into the CT pin will be 0.3mA higher than the measured value approximately.
V
REF
4.7k
R
T
2N2222
1
AP384XC
COMP
V
REF
V
CC
8
A
V
CC
1k
ERROR AMP
ADJUST
4.7k
100k
2
V
FB
7
5k
I
SENSE
ADJUST
0.1µF
3
I
SENSE
OUTPUT
R
T
/C
T
GND
6
1K
1W
OUTPUT
0.1µF
4
5
GND
C
T
Figure 4. Basic Test Circuit
Sep. 2006 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
7
BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
