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SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
ELECTRICAL CHARACTERISTICS (continued)
At T = +25°C, V
= 15V, R = 10kΩ, unless otherwise noted.
L
A
S
INA128P, U
INA129P. U
INA128PA, UA
INA129PA, UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
OUTPUT
Voltage: Positive
R
= 10kΩ
R = 10kΩ
L
(V+) − 1.4
(V−) + 1.4
(V+) − 0.9
(V−) + 0.8
1000
∗
∗
∗
∗
∗
∗
V
V
L
Voltage: Negative
Load Capacitance Stability
Short-Circuit Current
FREQUENCY RESPONSE
Bandwidth, −3dB
pF
mA
+6/−15
G = 1
1.3
700
200
20
4
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
MHz
kHz
kHz
kHz
V/µs
µs
G = 10
G = 100
G = 1000
Slew Rate
V
O
=
10V, G = 10
G = 1
Settling Time, 0.01%
7
G = 10
7
µs
G = 100
G = 1000
9
µs
80
4
µs
Overload Recovery
POWER SUPPLY
Voltage Range
50% Overdrive
µs
2.25
15
18
∗
∗
∗
∗
∗
V
Current, Total
V
= 0V
700
750
µA
IN
TEMPERATURE RANGE
Specification
−40
−40
+85
∗
∗
∗
∗
°C
°C
Operating
+125
q
JA
8-Pin DIP
80
∗
∗
°C/W
°C/W
SO-8 SOIC
150
:
NOTE
∗ Specification is same as INA128P, U or INA129P, U.
(1)
(2)
(3)
(4)
Input common-mode range varies with output voltage — see typical curves.
Specified by wafer test.
Temperature coefficient of the 50kΩ (or 49.4kΩ) term in the gain equation.
Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is 0.001%.
4
BB [ BURR-BROWN CORPORATION ]
