SPECIFICATIONS (CONT)
ELECTRICAL
TA = –40°C to +85°C, fS = 100kHz, VDIG = VANA = +5V, using internal reference, unless otherwise specified.
ADS7820P/U
ADS7820PB/UB
TYP
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
MAX
UNITS
POWER SUPPLIES
Specified Performance
VDIG
Must be ≤ VANA
+4.75
+4.75
+5
+5
0.3
16
+5.25
+5.25
✱
✱
✱
✱
✱
✱
✱
✱
V
V
mA
mA
VANA
+IDIG
+IANA
Power Dissipation
f
S = 100kHz
100
✱
mW
TEMPERATURE RANGE
Specified Performance
Derated Performance
Storage
–40
–55
–65
+85
+125
+150
✱
✱
✱
✱
✱
✱
°C
°C
°C
Thermal Resistance (θJA
)
Plastic DIP
SOIC
75
75
✱
✱
°C/W
°C/W
NOTES: (1) LSB means Least Significant Bit. For the 12-bit, 0 to +5V input ADS7820, one LSB is 1.22mV. (2) Typical rms noise at worst case transitions and
temperatures. (3) Adjustable to zero with external potentiometer as shown in Figure 4b. (4) Full scale error is the worst case of Full Scale untrimmed deviation from
ideal last code transition divided by the transition voltage and includes the effect of offset error. (5) All specifications in dB are referred to a full-scale input. (6) Full-
Power Bandwidth defined as Full-Scale input frequency at which Signal-to-(Noise + Distortion) degrades to 60dB, or 10 bits of accuracy. (7) Recovers to specified
performance after 2 x FS input overvoltage.
ABSOLUTE MAXIMUM RATINGS
ELECTROSTATIC
Analog Inputs: VIN ....................................................–0.7V to +VANA +0.3V
REF .................................... +VANA +0.3V to AGND2 –0.3V
DISCHARGE SENSITIVITY
CAP ........................................... Indefinite Short to AGND2
Momentary Short to VANA
Electrostatic discharge can cause damage ranging from per-
formance degradation to complete device failure. Burr-
Brown Corporation recommends that all integrated circuits
Ground Voltage Differences: DGND, AGND1, AGND2 ................... ±0.3V
VANA ....................................................................................................... 7V
VDIG to VANA ..................................................................................... +0.3V
VDIG ....................................................................................................... 7V
be handled and stored using appropriate ESD protection
methods.
Digital Inputs ............................................................ –0.3V to +VDIG +0.3V
Maximum Junction Temperature ................................................... +165°C
Internal Power Dissipation ............................................................. 825mW
Lead Temperature (soldering, 10s) ................................................ +300°C
ESD damage can range from subtle performance degrada-
tion to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet
PACKAGE INFORMATION
PACKAGE DRAWING
published specifications.
PRODUCT
PACKAGE
NUMBER(1)
ADS7820P
ADS7820PB
ADS7820U
ADS7820UB
Plastic DIP
Plastic DIP
SOIC
246
246
217
217
SOIC
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix D of Burr-Brown IC Data Book.
ORDERING INFORMATION
MINIMUM
SIGNAL-TO-
MAXIMUM
LINEARITY
ERROR (LSB)
(NOISE +
DISTORTION)
RATIO (dB)
SPECIFICATION
TEMPERATURE
RANGE
PRODUCT
PACKAGE
ADS7820P
ADS7820PB
ADS7820U
ADS7820UB
±1.0
±0.5
±1.0
±0.5
70
72
70
72
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
Plastic DIP
Plastic DIP
SOIC
SOIC
®
3
ADS7820
BB [ BURR-BROWN CORPORATION ]
