OptiMOS™ P-channel 60V MOSFETs in SOT-223 package is ideally suited for load switch, battery management as well as reverse polarity protection applications. Main advantage of OptiMOS™ P-channel MOSFETs is the simplifying of the design complexity in medium and low power applications. Its easy interface to Microcontroller Unit (MCU), fast switching as well as avalanche ruggedness makes Infineon’s OptiMOS™ P-channel MOSFETs suitable for high quality demanding applications. The products improve efficiency at low loads due to low Qg.and are available in normal and logic level featuring a wide RDS(on) range.
BM6112FV-C is a gate driver with isolation voltage of 3750Vrms, I/O delay time of 150ns, and incorporates fault signal output function, ready signal output function, under voltage lockout (UVLO) function, short circuit protection (SCP) function, active miller clamping function, output state feedback function and temperature monitor function.For sale of this product, please contact the specifications in our sales office. Currently, we don't sell this on the internet distributors now.
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.6 mOhm, addressing a broad range of applications from low- to high-switching frequency.
