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MG052S09A200DP 参数 Datasheet PDF下载

MG052S09A200DP图片预览
型号: MG052S09A200DP
PDF下载: 下载PDF文件 查看货源
内容描述: [Trans Voltage Suppressor Diode, 9V V(RWM), Bidirectional, 2 Element, Silicon, CERAMIC PACKAGE-4]
分类和应用: 电阻器
文件页数/大小: 4 页 / 113 K
品牌: AVX [ AVX CORPORATION ]
 浏览型号MG052S09A200DP的Datasheet PDF文件第2页浏览型号MG052S09A200DP的Datasheet PDF文件第3页浏览型号MG052S09A200DP的Datasheet PDF文件第4页  
MultiGuard
(2 & 4 Elements)
AVX Multilayer Ceramic
Transient Voltage Suppression Arrays
ESD Protection for CMOS and Bi Polar Systems
GENERAL DESCRIPTION AND COMMENTS
AVX’s Transient Voltage Suppression (TVS) Arrays address
six trends in today’s electronic circuits: (1) mandatory ESD
protection, (2) mandatory EMI control, (3) signal integrity
improvement, (4) PCB downsizing, (5) reduced component
placement costs, and (6) protection from induced slow
speed transient voltages and currents.
AVX’s MultiGuard products offer numerous advantages,
which include a faster turn-on-time (<1nS), repetitive strike
capability, and space savings. In some cases, MultiGuard
consumes less than 75% of the PCB real estate required for
the equivalent number of discrete chips. This size advantage,
coupled with the savings associated with placing only one
chip, makes MultiGuard the TVS component of choice for
ESD protection of I/O lines in portable equipment and pro-
gramming ports in cellular phones. Other applications
include differential data line protection, ASIC protection and
LCD driver protection for portable computing devices.
Where multiple lines require the ESD protection, the 4-element
0612 or 0508 chip is an ideal solution. While the 2-element
0405 MultiGuard is the smallest TVS array, the 4-element
0508 MultiGuard is the smallest 4-element TVS device avail-
able in the market today.
Available with standard working voltage of 5.6V up to 18V
with low capacitance in the 3 case sizes, AVX MultiGuard
arrays offer a very broad range of integrated TVS solutions
to the design community.
SIZE: 0405
SIZE: 0508
SIZE: 0508
SIZE: 0612
2 Element
4 Element
ELECTRICAL CHARACTERISTICS PER ELEMENT
AVX
Part Number
Symbol
Working
Voltage
V
WM
Volts (max.)
<50µA
5.6
14.0
18.0
5.6
9.0
14.0
18.0
≤18.0
5.6
9.0
14.0
18.0
18.0
5.6
9.0
14.0
18.0
≤18.0
Breakdown
Voltage
V
B
Volts
1mA DC
7.6 - 9.3
16.5 - 20.5
22.5 - 28.0
6.8 - 9.3
10.0 - 14.0
14.7 - 20.3
20.4 - 28.0
N/A
6.8 - 10.3
10.0 - 15.0
14.7 - 22.0
20.4 - 28.0
N/A
6.8 - 9.3
10.0 - 14.0
14.7 - 20.3
20.4 - 28.0
N/A
Clamping
Voltage
V
C
Volts (max.)
8/20µS
15.5
40
50
15.5
20
30
40
50
17.5
22
32
42
52
15.5
20
30
40
50
Peak
Current
I
peak
Amp (max.)
8/20µs
20
15
15
30
30
30
30
20
20
20
20
20
15
30
30
30
30
20
Transient
Energy
E
trans
Joules (max.)
10/1000µS
0.05
0.02
0.02
0.1
0.1
0.1
0.1
0.05
50
50
50
50
50
0.1
0.1
0.1
0.1
0.05
Capacitance
C
pF (typ.)
0.5Vrms @:
1 MHz
360
40
40
825
550
425
225
<75
410
290
150
110
50
825
550
425
225
75
Element
Chip Size
Units
Test Condition
2 Element
0405 Chip
MG042S05X150 _ _
MG042L14V400 _ _
MG042L18V500 _ _
MG052S05A150 _ _
MG052S09A200 _ _
MG052S14A300 _ _
MG052S18A400 _ _
MG052L18X500 _ _
MG054S05X150 _ _
MG054S09X200 _ _
MG054S14X300 _ _
MG054S18X400 _ _
MG054L18V500 _ _
MG064S05A150 _ _
MG064S09A200 _ _
MG064S14A300 _ _
MG064S18A400 _ _
MG064L18X500 _ _
2 Element
0508 Chip
4 Element
0508 Chip
4 Element
0612 Chip
Termination Finish: P = Ni/Sn Alloy (Plated)
Q = 100% Sn
X = Pt/Pd/Ag (Non-Plated)
Packaging (Pcs/Reel): see page 2
16