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08053C103MAT4A 参数 Datasheet PDF下载

08053C103MAT4A图片预览
型号: 08053C103MAT4A
PDF下载: 下载PDF文件 查看货源
内容描述: 一般特定网络阳离子 [General Specifications]
分类和应用:
文件页数/大小: 20 页 / 339 K
品牌: KYOCERA AVX [ KYOCERA AVX ]
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General Description  
di  
dt  
The  
seen in current microprocessors can be as high as  
I (Ideal)  
0.3 A/ns, and up to 10A/ns. At 0.3 A/ns, 100pH of parasitic  
inductance can cause a voltage spike of 30mV. While this  
does not sound very drastic, with the Vcc for microproces-  
sors decreasing at the current rate, this can be a fairly large  
percentage.  
I (Actual)  
Loss  
Angle  
Phase  
Angle  
Another important, often overlooked, reason for knowing  
the parasitic inductance is the calculation of the resonant  
frequency. This can be important for high frequency, by-  
pass capacitors, as the resonant point will give the most  
signal attenuation. The resonant frequency is calculated  
from the simple equation:  
f
V
IRs  
In practice the current leads the voltage by some other  
phase angle due to the series resistance RS. The comple-  
ment of this angle is called the loss angle and:  
fres =  
1
2LC  
Insulation Resistance – Insulation Resistance is the  
resistance measured across the terminals of a capacitor  
and consists principally of the parallel resistance RP shown  
in the equivalent circuit. As capacitance values and hence  
the area of dielectric increases, the I.R. decreases and  
hence the product (C x IR or RC) is often specified in ohm  
faradsor more commonly megohm-microfarads. Leakage  
current is determined by dividing the rated voltage by IR  
(Ohm’s Law).  
Power Factor (P.F.) = Cos f or Sine  
Dissipation Factor (D.F.) = tan ꢀ  
for small values of the tan and sine are essentially equal  
which has led to the common interchangeability of the two  
terms in the industry.  
Equivalent Series Resistance – The term E.S.R. or  
Equivalent Series Resistance combines all losses both  
series and parallel in a capacitor at a given frequency so  
that the equivalent circuit is reduced to a simple R-C series  
connection.  
Dielectric Strength – Dielectric Strength is an expression  
of the ability of a material to withstand an electrical stress.  
Although dielectric strength is ordinarily expressed in volts, it  
is actually dependent on the thickness of the dielectric and  
thus is also more generically a function of volts/mil.  
Dielectric Absorption – A capacitor does not discharge  
instantaneously upon application of a short circuit, but  
drains gradually after the capacitance proper has been dis-  
charged. It is common practice to measure the dielectric  
absorption by determining the “reappearing voltage” which  
appears across a capacitor at some point in time after it has  
been fully discharged under short circuit conditions.  
E.S.R.  
C
Dissipation Factor – The DF/PF of a capacitor tells what  
percent of the apparent power input will turn to heat in the  
capacitor.  
Corona – Corona is the ionization of air or other vapors  
which causes them to conduct current. It is especially  
prevalent in high voltage units but can occur with low voltages  
as well where high voltage gradients occur. The energy  
discharged degrades the performance of the capacitor and  
can in time cause catastrophic failures.  
E.S.R.  
XC  
Dissipation Factor =  
= (2 π fC) (E.S.R.)  
The watts loss are:  
Watts loss = (2 π fCV2) (D.F.)  
Very low values of dissipation factor are expressed as their  
reciprocal for convenience. These are called the “Q” or  
Quality factor of capacitors.  
Parasitic Inductance – The parasitic inductance of capac-  
itors is becoming more and more important in the decou-  
pling of today’s high speed digital systems. The relationship  
between the inductance and the ripple voltage induced on  
the DC voltage line can be seen from the simple inductance  
equation:  
di  
dt  
V = L  
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