C0G (NP0) Dielectric
Specifications and Test Methods
Parameter/Test
Operating Temperature Range
Capacitance
NP0 Specification Limits
Measuring Conditions
Temperature Cycle Chamber
Freq.: 1.0 MHz ± 10% for cap ≤ 1000 pF
1.0 kHz ± 10% for cap > 1000 pF
Voltage: 1.0Vrms ± .2V
-55ºC to +125ºC
Within specified tolerance
<30 pF: Q≥ 400+20 x Cap Value
≥30 pF: Q≥ 1000
Q
100,000MΩ or 1000MΩ - µF,
Charge device with rated voltage for 60 ± 5 secs
@ room temp/humidity
Insulation Resistance
whichever is less
Charge device with 250% of rated voltage for 1-5
seconds, w/charge and discharge current limited
to 50 mA (max)
Note: Charge device with 150% of rated voltage
for 500V devices.
Dielectric Strength
No breakdown or visual defects
Appearance
Capacitance
No defects
Deflection: 2mm
Test Time: 30 seconds
±5% or ±.5 pF, whichever is greater
Meets Initial Values (As Above)
Variation
Resistance to
Flexure
Q
Stresses
Insulation
Resistance
≥ Initial Value x 0.3
≥ 95% of each terminal should be covered
Dip device in eutectic solder at 230 ± 5ºC for 5.0 ±
0.5 seconds
Solderability
with fresh solder
Appearance
No defects, <25% leaching of either end terminal
≤ ±2.5% or ±.25 pF, whichever is greater
Meets Initial Values (As Above)
Capacitance
Variation
Dip device in eutectic solder at 260ºC for
60sec- onds. Store at room temperature
for 24 ± 2hours before measuring electrical
properties.
Resistance to
Solder Heat
Q
Insulation
Resistance
Meets Initial Values (As Above)
Dielectric
Strength
Meets Initial Values (As Above)
Appearance
No visual defects
Step 1: -55ºC ± 2º
30 ± 3 minutes
Capacitance
Variation
≤ ±2.5% or ±.25 pF, whichever is greater
Step 2: Room Temp
≤ 3 minutes
Q
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Step 3: +125ºC ± 2º
Step 4: Room Temp
30 ± 3 minutes
Thermal Shock
Insulation
Resistance
≤ 3 minutes
Dielectric
Strength
Appearance
Repeat for 5 cycles and measure after
24 hours at room temperature
Meets Initial Values (As Above)
No visual defects
Capacitance
≤ ±3.0% or ± .3 pF, whichever is greater
Charge device with twice rated voltage in test
chamber set at 125ºC ± 2ºC
Variation
≥ 30 pF:
≥10 pF, <30 pF:
<10 pF:
Q≥ 350
Q≥ 275 +5C/2
Q≥ 200 +10C
for 1000 hours (+48, -0).
Q
(C=Nominal Cap)
Load Life
Remove from test chamber and stabilize at
room temperature for 24 hours
before measuring.
Insulation
Resistance
Dielectric
Strength
≥ Initial Value x 0.3 (See Above)
Meets Initial Values (As Above)
No visual defects
Appearance
Capacitance
Variation
≤ ±5.0% or ± .5 pF, whichever is greater
Store in a test chamber set at 85ºC ± 2ºC/ 85% ±
5% relative humidity for 1000 hours
≥ 30 pF:
Q≥ 350
Q≥ 275 +5C/2
Q≥ 200 +10C
(+48, -0) with rated voltage applied.
Q
≥10 pF, <30 pF:
<10 pF:
Load
Humidity
Remove from chamber and stabilize at room
temperature for 24 ± 2 hours before measuring.
Insulation
Resistance
≥ Initial Value x 0.3 (See Above)
Dielectric
Strength
Meets Initial Values (As Above)
The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or
available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.
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