@vic
AV9012
TO-92 Plastic-Encapsulate Transistors
AV9012 TRANSISTOR（ PNP
）
FEATURES
Power dissipation
P
CM
: 0.625 W（Tamb=25℃）
Collector current
I
CM
: -0.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3.COLLECTOR
1
2 3
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified
）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE
（
1
）
DC current gain
H
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
CE
(sat)
V
BE
(sat)
V
EB
V
CE
= -1V, I
C
=-500 mA
I
C
=-500 mA, I
B
=-50 mA
I
C
=-500mA,I
B
=-50 mA
I
E
=-100mA
V
CE
=- 6 V, I
C
= -20 mA
40
-0.6
-1.2
-1.4
V
V
V
Test conditions
Ic= -100
μ
A， I
E
=0
Ic= -0. 1 mA， I
B
=0
I
E
= -100
μ
A， I
C
=0
V
CB
=-40 V I
E
=0
V
CE
=- 20 V I
B
=0
V
EB
= - 5 V， I
C
=0
V
CE
= -1 V, I
C
= -50 mA
64
MIN
-40
-25
-5
-0.1
-0.2
-0.1
300
MAX
UNIT
V
V
V
μ
A
μ
A
μ
A
Transition frequency
f
T
f =
30MHz
150
MHz
CLASSIFICATION OF HFE(1)
Rank
Range
D
64-91
E
78-112
F
96-135
G
112-166
H
144-202
I
190-300
Copyright © Avic Electronics Corp.
1
Website:
http://www.avictek.com
AVICTEK [ Avic Technology ]
