@vic AV8550S
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Fig.2 DC current Gain
Fig.3 Base-Emitter on Voltage
0.5
0.4
3
2
10
I
I
I
B
=3.0mA
=2.5mA
=2.0mA
10
V
CE=1V
B
B
VCE=1V
1
10
2
10
0.3
0.2
I
I
B
=1.5mA
=1.0mA
B
1
0
10
10
I
B
=0.5mA
0.1
0
0
-1
10
10
0
0.4
0.8
1.2
1.6
2.0
-1
10
0
1
2
3
10
0
0.2
0.4
0.6
0.8
1.0
10
10
10
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
4
3
10
3
10
10
Ic=10*I
B
VCE=10V
f=1MHz
3
2
2
10
VBE(sat)
I
E=0
10
10
2
1
1
10
10
10
VCE(sat)
1
0
0
10
10
10
3
0
1
2
3
10
0
1
2
3
10
-1
10
0
1
2
10
10
10
10
10
10
10
10
10
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
QW-R201-012,A
AVICTEK [ Avic Technology ]
