@vic AV13001
NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE
RANK
A
B
C
D
E
F
G
H
I
J
K
L
RANGE
10-15 15-20 20-25 25-30 30-35 35-40 40-45 45-50 50-55 55-60 60-65 65-70
TYPICAL CHARACTERISTICS
Figure 2. DC Current Gain
Figure 1. Staic Characteristic
20
1000
100
18
16
VCE=10V
IB =120uA
14
IB =100uA
12
IB =80uA
10
8
IB =60uA
10
1
IB =40uA
6
4
IB =20uA
2
0
0
20
40
60
80
100
1
10
100
VCE (V) Collector-Emitter Voltage
Ic (mA)Collector Current
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
20
10
10
IE=0
f=1MHz
IC =10IB
VBE(sat)
1
1
0.1
VCE(sat)
0.01
1
0.1
1
10
100
10
100
VCB(V),Collector-Base Voltage
Ic (mA)Collector Current
QW-R201-055,A
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