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MGA-631P8-BLKG 参数 Datasheet PDF下载

MGA-631P8-BLKG图片预览
型号: MGA-631P8-BLKG
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声,高线性度,有源偏置低噪声放大器 [Low Noise, High Linearity, Active Bias Low Noise Amplifier]
分类和应用: 射频和微波射频放大器微波放大器
文件页数/大小: 18 页 / 293 K
品牌: AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
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MGA-631P8
Low Noise, High Linearity, Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-631P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA) with active
bias. The LNA has low noise with excellent input return
loss and high linearity achieved through the use of
Avago Technologies’ proprietary 0.5um GaAs Enhance-
ment-mode pHEMT process. The LNA has an extra feature
that allows a designer to adjust supply current and gain
externally. Due to the high isolation between the input
and output, gain can be adjusted independently through
a resistor in series with a blocking capacitor from the
output pin to FB1 pin, without affecting the noise figure.
It is housed in a miniature 2.0 x 2.0 x 0.75mm
3
8-pin Thin
Small Leadless Package (TSLP) package. The compact
footprint and low profile coupled with low noise, high
gain, excellent input return loss and high linearity make
the MGA-631P8 an ideal choice as an LNA for cellular in-
frastructure for GSM, CDMA, GPS and ISM applications.
It is designed for optimum use between 400MHz to
1.5GHz. For optimum performance at higher frequency
from 1.4GHz to 3.8GHz, the MGA-632P8 is recommend-
ed. Both MGA-631P8 and MGA-632P8 share the same
package and pinout.
Features
x
Low noise figure
x
Good input return loss
x
High linearity performance
x
High Isolation
x
Externally adjustable supply current, 40-80mA
x
Externally adjustable gain, 15-20dB
x
GaAs E-pHEMT Technology
[1]
x
Low cost small package size: 2.0x2.0x0.75 mm
3
x
Excellent uniformity in product specifications
Specifications
900MHz; 4V, 54mA (typ)
x
x
x
x
x
x
17.5 dB Gain
0.53 dB Noise Figure
-19.4dB S11
-34dB S12
32.6 dBm Output IP3
18.0 dBm Output Power at 1dB gain compression
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm
3
8-lead TSLP
Applications
x
Low noise amplifier for cellular infrastructure for GSM,
CDMA, GPS and ISM.
x
Other ultra low noise applications.
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Top View
Note:
Package marking provides
orientation and identification
“G1” is Device Code
“X” is month code
Bottom View
Note:
Pin 1 : not used
Pin 2 : RFin
Pin 3 : RF ground
Pin 4 : Vbias
Pin 5 : FB1
Pin 6 : not used
Pin 7 : RFout
Pin 8 : Gnd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.