[1]
MGA-31589 Absolute Maximum Rating
Thermal Resistance
[3]
Symbol
Vdd, max
Pd
Parameter
Units
V
Absolute Max.
5.5
Thermal Resistance
(V = 5.0 V, I = 146 mA, T = 85° C),
dd
dd
c
Drain Voltage, RF output to ground
Power Dissipation (2)
θ
jc
= 44° C/W
mW
dBm
°C
1050
Notes:
Pin
CW RF Input Power
17
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Source lead temperature is 25° C. Derate 22.7
Tj
Junction Temperature
Storage Temperature
150
TSTG
°C
-65 to 150
mW/° C for T >103.8° C.
L
3. Thermal resistance measured using 150° C
Infra-Red Microscopy Technique.
[1]
MGA-31589 Electrical Specification
T = 25° C, Z = 50 W, V = 5 V, unless specified.
C
o
dd
Frequency
(MHz)
Symbol
Ids
Parameter and Test Condition
Quiescent Current
Noise Figure
Units
mA
dB
Min.
Typ.
Max.
NA
115
146
175
NF
700
900
2.35
1.92
2.8
Gain
OIP3
P1dB
PAE
Gain
700
900
700 [2]
900 [2]
dB
20.5
20.4
19.3
40.0
26.3
22.0
Output Third Order Intercept Point
dBm
dBm
%
45.2
45.3
Output Power at 1 dB Gain Compression
Power Added Efficiency at P1dB
Input Return Loss
700
900
26.4
27.2
700
900
43.6
45.0
IRL
700
900
dB
20.0
14.0
ORL
ISOL
Note :
Output Return Loss
700
900
dB
10.4
11.6
Isolation
700
900
dB
28.0
27.5
1. Measurements obtained from a test circuit described in Figure 27.
2. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -8 dBm per tone measured at worst case side band.
2