Typical Parameters, Single Diode
100
T A = –55°C
T A = +25°C
T A = +85°C
100
IF (left scale)
10
10000
R L = 100 KΩ
1000
FORWARD VOLTAGE DIFFERENCE(mV)
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
FORWARD CURRENT (mA)
10
2.45 GHz
915 MHz
VOLTAGE OUT (mV)
100
10
1
0.1
-50
1
10
.1
VF (right scale)
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
-40
-30
-2 0
-1 0
0
POWER IN (dBm)
.01
0.1 0.2 0.3 0.4 0.5 0.6 0. 7 0.8 0.9 1.0
FORWARD VOLTAGE (V)
1
0.05
0.10
0.15
0.20
0.25
1
FORWARD VOLTAGE (V)
30
R L = 100 KΩ
10,000
915 MHz
1000
20
µA
10
µA
5
µA
100
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R L = 100 KΩ
40
35
10
2.45 GHz
OUTPUT VOLTAGE (mV)
VOLTAGE OUT (mV)
VOLTAGE OUT (mV)
30
25
20
15
10
Input Power =
–30 dBm @ 2.45 GHz
Data taken in fixed-tuned
FR4 circuit
R L = 100 KΩ
.1
1
10
100
BIAS CURRENT (µA)
1
5.8 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
10
0.3
-50
-40
POWER IN (dBm)
-30
1
–40
–30
–20
–10
0
10
5
POWER IN (dBm)
5
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
