Typical Parameters at TC = 25°C (unless otherwise noted), Single Diode
100
100
10
1
100
10
V
R = 2V
R = 5V
V
1
10
VR = 10V
0.1
0.01
–50C
0.8
25C
0.6
125C
0.2 0.4
1
10
0.1
0
1.0 1.2
20
FORWARD CURRENT (mA)
30
0.01
0.1
1
10
100
I
– FORWARD BIAS CURRENT (mA)
F
V
– FORWARD VOLTAGE (mA)
F
Figure 2. Reverse Recovery Time vs. Forward
Current for Various Reverse Voltages.
Figure 1. Forward Current vs. Forward Voltage.
Figure 3. RF Resistance at 25C vs. Forward Bias
Current.
120
30
25
1.4
1.2
1.0
0.8
0.6
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
115
110
1.5 GHz
20
105
100
95
15
1.0 GHz
10
5
90
Measured with external
bias return
0
85
0
10
20
30
40
50
0
5
10 15 20 25 30 35 40
CW POWER IN (dBm)
1
10
30
V
– REVERSE VOLTAGE (V)
I
– FORWARD BIAS CURRENT (mA)
R
F
Figure 4. Capacitance vs. Reverse Voltage.
Figure 6. Large Signal Transfer Curve of the
HSMP-482x Limiter.
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current.
Typical Applications for Multiple Diode Products
RF COMMON
RF COMMON
RF 2
RF 1
BIAS
RF 1
RF 2
BIAS 1
BIAS 2
BIAS
Figure 8. High Isolation SPDT Switch, Dual Bias.
Figure 7. Simple SPDT Switch, Using Only Positive Current.
3
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
