Absolute Maximum Ratings
[1]
T
C
= +25°C
Symbol
I
f
P
IV
T
j
T
stg
T
jc
Parameter
Forward Current (1 μs Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23
1
Same as V
BR
150
-65 to 150
500
SOT-323
1
Same as V
BR
150
-65 to 150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications T
C
= +25°C (Each Diode)
Conventional Diodes
Minimum
Breakdown
Voltage V
BR
(V)
Maximum
Total
Capacitance
C
T
(pF)
Minimum
Resistance
at
I
F
= 0.01mA,
RH (Ω)
Maximum
Resistance
at
I
F
= 20mA,
R
L
(Ω)
Maximum
Resistance
at
I
F
= 100mA,
RT (Ω)
Resistance
at
I
F
= 1mA,
R
M
(Ω)
Part
Number
HSMP-
3810
3812
3813
3814
3815
381B
381C
381E
381F
Package
Marking
Code
E0
E2
E3
E4
E5
E0
E2
E3
E4
Lead
Code
0
2
3
4
5
B
C
E
F
Configuration
Single
Series
Common Anode
Common Cathode
Reverse Series
Single
Series
Common Anode
Common Cathode
100
0.35
1500
10
3.0
48 to 70
Test Conditions
V
R
= V
BR
Measure
I
R
≤ 10uA
V
R
= 50V
f = 1MHz
I
F
= 0.01mA I
F
= 20mA
f = 100MHz f = 100MHz
I
F
= 100mA
f = 100MHz
I
F
= 1mA
f = 100MHz
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Part
Number
HSMP-
4810
481B
Package
Marking
Code
EB
EB
Lead
Code
B
B
Configuration
Dual Cathode
Dual Cathode
Minimum
Breakdown
Voltage
V
BR
(V)
100
V
R
= V
BR
Measure
I
R
≤ 10μA
Maximum
Series
Resistance
R
S
(Ω)
3
I
F
= 100mA
f=
100MHz
Series
Resistance
I
F
= 1mA,
R
M
(Ω)
48 - 70
I
F
= 1mA
f = 100MHz
Typical
Total
Capacitance
C
T
(pF)
0.35
V
R
= 50V
f = 1MHz
Maximum
Total
Capacitance
C
T
(pF)
0.4
V
R
= 50V
f = 1MHz
Typical
Total
Inductance
L
T
(nH)
1
f=
500MHz
- 3GHz
Test Conditions
2
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