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AS8F2M32QW-120/MIL 参数 Datasheet PDF下载

AS8F2M32QW-120/MIL图片预览
型号: AS8F2M32QW-120/MIL
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×32的FLASH闪存模块 [2M x 32 FLASH FLASH MEMORY MODULE]
分类和应用: 闪存内存集成电路
文件页数/大小: 12 页 / 382 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SEMICONDUCTOR, INC.  
FLASH  
AS8F2M32  
Austin Semiconductor, Inc.  
ELECTRICAL CHARACTERISTICS AND RECOMMENDEDAC OPERATING CONDITIONS  
(VCC = 5.0V, -55°C < TA < +125°C)  
-90  
MIN MAX MIN MAX MIN MAX  
WE\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS)  
-120  
-150  
PARAMETER  
SYM  
UNITS  
Write Cycle Time  
90  
0
120  
0
150  
0
ns  
ns  
t
t
AVAV  
WC  
Chip Select Setup Time  
Write Enable Pulse Width  
Address Setup Time  
Data Setup Time  
t
t
ELWL  
CS  
45  
0
50  
0
50  
0
ns  
t
t
WLWH  
WP  
ns  
t
t
AVWL  
DVWH  
WHDX  
AS  
DS  
DH  
45  
0
50  
0
50  
0
ns  
t
t
Data Hold Time  
ns  
t
t
Address Hold Time  
45  
20  
50  
20  
50  
20  
ns  
t
t
AH  
WLAX  
Write Enable Pulse Width High  
ns  
t
t
WPH  
WHWL  
1
300  
15  
300  
15  
300  
15  
µs  
sec  
µs  
µs  
sec  
sec  
ns  
t
t
Duration of Byte Progreamming Operation  
WHWH1  
WHWH2  
2
Sector Erase  
Read Recovery Time before Write  
0
0
0
t
GHWL  
50  
50  
50  
V
Setup Time  
t
VCS  
CC  
3
44  
44  
44  
Chip Programming Time  
4
Chip Erase Time  
256  
256  
256  
5
10  
10  
10  
t
Output Enable Hold Time  
OEH  
RESET\ Pulse Width  
500  
500  
500  
ns  
t
RP  
READ-ONLY OPERATIONS  
Read Cycle Time  
90  
120  
150  
ns  
ns  
ns  
ns  
ns  
ns  
t
t
AVAV  
RC  
Address Access Time  
Chip Select Access Time  
Output Enable to Output Valid  
90  
90  
40  
20  
20  
120  
120  
50  
150  
150  
55  
t
t
ACC  
AVQV  
t
t
ELQV  
GLQV  
EHQZ  
CE  
OE  
t
t
t
t
6
30  
35  
t
Chip Select High to Output High  
DF  
DF  
6
30  
35  
t
Output Enable High to Output High  
Output Hold from Adresses, CS\ or  
OE\ Change, whichever is First  
GHQZ  
0
0
0
ns  
µs  
t
t
OH  
AXQX  
6
20  
20  
20  
t
RST Low to Read Mode  
Ready  
CS\ CONTROLLED (WRITE/ERASE/PROGRAM OPERATIONS)  
Write Cycle Time  
90  
0
120  
0
150  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
sec  
t
t
WC  
AVAV  
Write Enable Setup Time  
Chip Select Pulse Width  
Address Setup Time  
Data Setup Time  
t
t
WS  
WLEL  
45  
0
50  
0
50  
0
t
t
CP  
ELEH  
t
t
AVEL  
DVEH  
EHDX  
AS  
DS  
DH  
45  
0
50  
0
50  
0
t
t
t
Data Hold Time  
t
Address Hold Time  
Chip Select Pulse Width High  
45  
20  
50  
20  
50  
20  
t
t
AH  
ELAX  
EHEL  
t
t
CPH  
1
300  
15  
300  
15  
300  
15  
t
t
Duration of Byte Progreamming Operation  
WHWH1  
WHWH2  
2
Sector Erase Time  
Read Recovery Time  
0
0
0
µs  
t
GHEL  
3
44  
44  
44  
sec  
sec  
Chip Programming Time  
4
Chip Erase Time  
256  
256  
256  
5
10  
10  
10  
ns  
t
Output Enable Hold Time  
OEH  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8F2M32  
Rev. 2.5 05/09  
4