AUSTIN SEMICONDUCTOR, INC.
FLASH
AS8F2M32
Austin Semiconductor, Inc.
GENERAL DESCRIPTION (cont.)
The Sector Erase Architecture alloꢁs memory sectors to be erased any period of time to read data form, or program data to, any sector
and reprogrammed ꢁithout affecting the data contents of other sectors. that is not selected for erasure. True background erase can thus be
The device is fully erased ꢁhen shipped from the factory.
achieved.
The Hardꢁare RESET\ pin terminates any operation in progress
Hardꢁare Data Protection measures include a loꢁ VCC detector
that automatically inhibits ꢁrite operations during poꢁer transitions. The and resets the internal state machine to reading array data. The
Hardꢁare Sector Protection feature disables both program and erase RESET\ pin may be tied to the system reset circuitry. A system reset
operations in any combinations of the sectors of memory. This can be ꢁould thus also reset the device, enabling the system microprocessor to
achieved via programming equipment.
The Erase Suspend feature enables the user to put erase on hold for
read the boot-up firmꢁare from the FLASH memory.
The system can place the device into the standby mode. Poꢁer
consumption is greatly reduced in this mode.
FIGURE 2: FUNCTIONAL BLOCK DIAGRAM
WE \, CS \
1
WE \, CS \
2
WE \, CS \
3
WE \, CS \
4
1
2
3
4
RESET\
OE\
A0 - A20
2M x 8
2M x 8
2M x 8
2M x 8
8
8
8
8
I/O
I/O
I/O
I/O
16-23
24-31
0-7
8-15
PIN DESCRIPTION
PIN
DESCRIPTION
Data Inputs/Outputs
I/O0-31
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
A0-20
WE\1-4
CS\1-4
OE\
VCC
GND
RESET\
Reset
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS8F2M32
Rev. 2.5 05/09
2
AUSTIN [ AUSTIN SEMICONDUCTOR ]
