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AS5C4008 参数 Datasheet PDF下载

AS5C4008图片预览
型号: AS5C4008
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8 SRAM SRAM存储器阵列 [512K x 8 SRAM SRAM MEMORY ARRAY]
分类和应用: 存储静态存储器
文件页数/大小: 17 页 / 334 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SRAM  
AS5C4008  
Austin Semiconductor, Inc.  
AC TEST CONDITIONS  
Input pulse levels ................................................... Vss to 3.0V  
Input rise and fall times ....................................................... 3ns  
Input timing reference levels ............................................ 1.5V  
Output reference levels ..................................................... 1.5V  
Output load ............................................... See Figures 1 and 2  
167 ohms  
167 ohms  
Q
Q
1.73V  
1.73V  
C=30pF  
C=5pF  
Fig. 1 Output Load Equivalent  
Fig. 2 Output Load Equivalent  
9. Device is continuously selected. Chip enables and  
output enables are held in their active state.  
10. Address valid prior to, or coincident with, latest  
occurring chip enable.  
11. RC = Read Cycle Time.  
12. Chip enable and write enable can initiate and  
terminate a WRITE cycle.  
13. Output enable (OE\) is inactive (HIGH).  
14. Output enable (OE\) is active (LOW).  
15. ASI does not warrant functionality nor reliability of any  
product in which the junction temperature exceeds  
150°C. Care should be taken to limit power to acceptable  
levels.  
NOTES  
1. All voltages referenced to VSS (GND).  
2. -2V for pulse width < 20ns  
3. ICC is dependent on output loading and cycle rates.  
4. This parameter is guaranteed but not tested.  
5. Test conditions as specified with the output loading  
as shown in Fig. 1 unless otherwise noted.  
6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE  
are specified with CL = 5pF as in Fig. 2. Transition is  
measured ±200mV from steady state voltage.  
7. At any given temperature and voltage condition,  
t
tHZCE is less thantLZCE, and HZWE is less than  
tLZWE.  
t
8. WE\ is HIGH for READ cycle.  
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)  
DESCRIPTION  
CONDITIONS  
CE\ > (Vcc -0.2V)  
VIN > (Vcc -0.2V) or < 0.2V  
SYMBOL  
MIN  
MAX  
UNITS NOTES  
V
CC for Retention Data  
VDR  
2
V
Data Retention Current  
(L Version Only)  
V
CC = 2V  
ICCDR  
4.5  
mA  
Chip Deselect to Data  
Retention Time  
0
ns  
4
t
CDR  
Operation Recovery Time  
10  
ms  
4, 11  
t
R
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS5C4008  
Rev. 5.5 12/01  
5
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