SRAM
Austin Semiconductor, Inc.
AS5C1008
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55
o
C<T
A
<+125
o
C or -40
o
C to +85
o
C; Vcc = 5V+10%)
-15
DESCRIPTION
READ CYCLE
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Enable Access Time
Output Enable to Output in Low-Z
Output Disable to Output in High-Z
WRITE CYCLE
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Address Set-up Time
Address Hold from End of Write
Write Pulse Width (OE\ > V
IH
)
Data Set-up Time
Data Hold Time
Write Disable to Output in Low-Z
Write Enable to Output in High-Z
SYMBOL
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
AOE
t
LZOE
t
HZOE
t
WC
t
CW
t
AW
t
AS
t
AH
t
WP
t
DS
t
DH
t
LZWE
t
HZWE
15
12
12
0
0
12
8
0
5
7
0
7
20
15
15
0
0
15
10
0
5
9
3
3
7
7
0
8
25
20
20
0
0
20
15
0
5
10
1
-20
MIN
20
15
15
3
3
8
7
0
20
20
3
3
MAX
MIN
25
-25
MAX
UNIT
ns
25
25
ns
ns
ns
ns
10
10
ns
ns
ns
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MIN
15
MAX
NOTE:
1. t
LZCE
, t
LZWE
, t
HZCE
, t
LZOE
, and t
HZOE
are simulated values.
AS5C1008
Rev. 3.6 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4