欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS58LC1001DG-35/XT 参数 Datasheet PDF下载

AS58LC1001DG-35/XT图片预览
型号: AS58LC1001DG-35/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 EEPROM耐辐射 [128K x 8 EEPROM Radiation Tolerant]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 21 页 / 272 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
 浏览型号AS58LC1001DG-35/XT的Datasheet PDF文件第2页浏览型号AS58LC1001DG-35/XT的Datasheet PDF文件第3页浏览型号AS58LC1001DG-35/XT的Datasheet PDF文件第4页浏览型号AS58LC1001DG-35/XT的Datasheet PDF文件第5页浏览型号AS58LC1001DG-35/XT的Datasheet PDF文件第7页浏览型号AS58LC1001DG-35/XT的Datasheet PDF文件第8页浏览型号AS58LC1001DG-35/XT的Datasheet PDF文件第9页浏览型号AS58LC1001DG-35/XT的Datasheet PDF文件第10页  
EEPROM
Austin Semiconductor, Inc.
AS58LC1001
AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(-55
o
C < T
C
< 125
o
C; Vcc = 5V + .3V)
Test Conditions
Input Pulse Levels:
Input rise and fall times:
Output Load:
Reference levels for measuring timing:
ITEM DESCRIPTION
Address Access Time
Chip Enable Access Time
Output Enable Acess Time
Output Hold to Address Change
Output Disable to High-Z
RES\ to Output Delay
0.0V to 3.0V
< 20ns
1 TTL Gate +100pF (including scope and jig)
1.5V, 1.5V
TEST CONDITION
SYMBOL
t
ACC
t
CE
t
OE
t
OH
t
DF
t
DFR
t
RR
-25
MIN MAX
---
---
10
0
0
0
0
250
250
120
---
75
350
600
-30
UNITS
MIN MAX
---
---
10
0
0
0
0
300
300
130
---
75
350
600
ns
ns
ns
ns
ns
ns
ns
CE\=OE\=V
IL
WE\=V
IH
OE\=V
IL
WE\=V
IH
CE\=V
IL
WE\=V
IH
CE\=OE\=V
IL
WE\=V
IH
CE\=V
IL
WE\=V
IH
CE\=OE\=V
IL
WE\=V
IH
CE\=OE\=V
IL
WE\=V
IH
AC ELECTRICAL CHARACTERISTICS FOR SOFTWARE DATA
PROTECTION CYCLE OPERATION
PARAMETER
Byte Load Cycle Time
Write Cycle Time
SYMBOL
t
BLC
t
WC
MIN
1.0
15
MAX
30
---
UNITS
S
mS
AC ELECTRICAL CHARACTERISTICS FOR DATA\ POLLING OPERATION
PARAMETER
Output Enable Hold Time
Output Enable to Write Setup Time
Write Start Time
Write Cycle Time
SYMBOL
t
OEH
t
OES
t
DW
t
WC
MIN
0
0
250
---
MAX
---
---
---
15
UNITS
ns
ns
ns
ms
AS58LC1001
Rev. 1.0 12/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6