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AS58C1001F-25/IT 参数 Datasheet PDF下载

AS58C1001F-25/IT图片预览
型号: AS58C1001F-25/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 EEPROM EEPROM存储器 [128K x 8 EEPROM EEPROM Memory]
分类和应用: 存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 22 页 / 295 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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EEPROM
Austin Semiconductor, Inc.
(EXAMPLE)
AS58C1001
Vcc
FUNCTIONAL DESCRIPTION (continued)
DATA PROTECTION (continued)
2. Data protection at Vcc on/off.
When RES\ is low, the EEPROM cannot be erased and
programmed. Therefore, data can be protected by keeping
RES\ low when Vcc is switched. RES\ should be high during
programming because it does not provide a latch function.
When Vcc is turned on or off, noise on the control pins
generated by external circuits (CPU, etc.) may turn the
EEPROM to programming mode by mistake. To prevent
this unintentional programming, the EEPROM must be kept
in an unprogrammable, standby or readout state by using a
CPU reset signal to RES\ pin.
In addition, when RES\ is kept high at Vcc on/off timing,
the input level of control pins (CE\, OE\, WE\) must be held
as CE\=Vcc or OE\=LOW or WE\=Vcc level.
3. Software Data Protection
To protect against unintentional programming caused by
noise generated by external circuits, AS58C1001 has a
Software data protection function. To initate Software data
protection mode, 3 bytes of data must be input, followed by
a dummy write cycle of any address and any data byte. This
exact sequence switches the device into protection mode.
End
Of
Life
RES\
*unprogrammable
*unprogrammable
Write Address
5555
Write Data
(Normal Data Input)
AA
55
2AAA
5555
A0
The Software data protection mode can be cancelled by
inputting the following 6 Bytes. This changes the AS58C1001
to the Non-Protection mode, for normal operation.
Address
5555
2AAA
5555
5555
2AAA
5555
Data
AA
55
80
AA
55
20
AS58C1001
Rev. 5.0 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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