EEPROM
Austin Semiconductor, Inc.
AS58C1001
AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE
WRITE OPERATIONS
PARAMETER
Address Setup Time
Chip Enable to Write Setup Time
Write Pulse Width
SYMBOL
t
AS
t
CS
7
8
MIN
0
0
250
250
150
100
10
0
0
0
MAX
---
---
---
---
---
---
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
Address Hold Time
Data Setup Time
Data Hold Time
Chip Enable Hold Time
Out Enable to Write Setup Time
Output Enable Hold Time
Write Cycle Time
Byte Load Window
Time to Device Busy
RES\ to Write Setup Time
Vcc to RES\ Setup Time
End
Of
Life
t
CW
t
WP
7
t
AH
t
DS
t
DH
---
t
CH
7
---
---
---
t
OES
t
WC
t
BL
t
DB
t
RP
t
OEH
10
---
ms
100
120
100
1
---
---
---
ns
µs
t
RES
10
---
AC TEST CONDITIONS
Input Pulse Levels............................................0V to 3V
Input Rise and Fall Times....................................<20ns
Input Timing Reference Level................................1.5V
Output Reference Level..........................................1.5V
Output Load................................................See Figure 1
NOTES:
1.
2.
3.
4.
5.
Relative to Vss
V
IN
min = -3.0V for pulse widths <50ns
V
IL
min = -1.0V for pulse widths <50ns
I
IL
on RES\ = 100ua MAX
t
OF
is defined as the time at which E the output becomes and
open circuit and data is no longer driven.
6. Use this device in longer cycle than this value
7. WE\ controlled operation
8. CE\ controlled operation
9. RES\ pin V
IH
is V
H
10. Reference only, not tested
Q
100pF
1 TTL GATE EQ.
Figure 1
OUTPUT LOAD EQUIVALENT
AS58C1001
Rev. 5.0 7/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
AUSTIN [ AUSTIN SEMICONDUCTOR ]
