SDRAM
AS4SD8M16
Austin Semiconductor, Inc.
WRITE - WITHOUT AUTO PRECHARGE1
TIMING PARAMETERS
-75
-75
SYMBOL*
MIN
MAX
UNITS
SYMBOL*
MIN
MAX
UNITS
t
0.8
ns
t
ns
AH
CMS
1.5
t
1.5
2.5
2.5
7.5
10
ns
ns
ns
ns
ns
ns
ns
ns
t
t
ns
ns
ns
ns
ns
ns
ns
AS
CH
DH
0.8
1.5
t
DS
t
t
44
66
20
20
15
80,000
CL
RAS
t
t
t
RC
CK(3)
CK(2)
t
RCD
t
0.8
1.5
0.8
t
RP
CKH
t
t
WR
CKS
t
CMH
*CAS latency indicated in parentheses.
NOTES:
1. For this example, the burst length = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 14ns to 15ns is required between <DIN m + 3> and the PRECHARGE command, regardless of frequency.
3. A9, A11= “Don’t Care”
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD8M16
Rev. 0.5 04/05
43