SDRAM
AS4SD8M16
Austin Semiconductor, Inc.
READ - WITHOUT AUTO PRECHARGE1
TIMING PARAMETERS
-75
-75
SYMBOL*
MIN
MAX
5.4
6
UNITS
SYMBOL*
MIN
0.8
MAX
UNITS
t
ns
t
ns
AC(3)
AC(2)
CMH
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
CMS
1.5
t
0.8
1.5
2.5
2.5
7.5
10
t
t
5.4
6
AH
HZ(3)
HZ(2)
t
AS
CH
t
t
1
LZ
t
t
3
CL
OH
t
t
t
44
66
20
20
80,000
CK(3)
CK(2)
RAS
t
RC
t
0.8
1.5
t
RCD
CKH
t
t
RP
CKS
*CAS latency indicated in parentheses.
NOTES:
1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. A9, A11= “Don’t Care”
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS4SD8M16
Rev. 0.5 04/05
36
AUSTIN [ AUSTIN SEMICONDUCTOR ]
