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AS4SD2M32 参数 Datasheet PDF下载

AS4SD2M32图片预览
型号: AS4SD2M32
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32× 4银行( 64 MB) SDRAM同步 [512K x 32 x 4 Banks (64-Mb) Synchronous SDRAM]
分类和应用: 动态存储器
文件页数/大小: 52 页 / 1943 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SDRAM  
AS4SD2M32  
Austin Semiconductor, Inc.  
TRUTH TABLE 2: CKE1,2,3,4  
CKEn-1 CKEn CURRENT STATE  
COMMANDn  
ACTIONn  
NOTES  
Power-Down  
X
X
X
Maintain Power-Down  
Maintain Self Refresh  
Maintain Clock Suspend  
L
L
L
Self Refresh  
Clock Suspend  
Power-Down  
COMMAND INHIBIT or NOP Exit Power-Down  
COMMAND INHIBIT or NOP Exit Self Refresh  
5
6
7
H
Self Refresh  
Clock Suspend  
All Banks Idle  
All Banks Idle  
Reading or Writing  
X
Exit Clock Suspend  
COMMAND INHIBIT or NOP Power-Down Entry  
H
L
AUTO REFRESH  
VALID  
Self Refresh Entry  
Clock Suspend Entry  
H
H
See Truth Table 3  
NOTES:  
1. CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.  
2. Current state is the state of the SDRAM immediately prior to clock edge n.  
3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn.  
4. All states and sequences not shown are illegal or reserved.  
5. Exiting power-down at clock edge n will put the device in the all banks idle state in time for clock edge n+1 (provided  
that tCKS is met).  
6. Exiting self refresh at clock edge n will put the device in the all banks idle state once tXSR is met. COMMAND INHIBIT or NOP  
commands should be issued on any clock edges occurring during the tXSR period. A minimum of two NOP commands must be  
provided during tXSR period.  
7. After exiting clock suspend at clock edge n, the device will resume operation and recognize the next command at clock  
edge n+1.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4SD2M32  
Rev. 1.0 1/08  
22  
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