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AS4SD16M72PBG-8/XT 参数 Datasheet PDF下载

AS4SD16M72PBG-8/XT图片预览
型号: AS4SD16M72PBG-8/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 16M X 72 , SDR SDRAM MCP [16M x 72, SDR SDRAM MCP]
分类和应用: 内存集成电路动态存储器
文件页数/大小: 16 页 / 199 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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AS4SD16M72PBG-s/IT,ET,XT  
16M x 72, SDR SDRAM, 3.3v Core/ 3.3v IO  
N + m. The DQs will start driving as a result of the clock  
Specifies the type of burst (sequential or interleaved), M4-M6  
specify the CAS latency, M7 and M8 specify the operating  
mode, M9 specifies the WRITE BURST mode and M10,  
M11 are reserved for future use. Address A12 (M12) is  
undefined but should be driven LOW during loading of the  
MODE REGISTER.  
edge one cycle earlier (n + m - 1), and provided that the  
relevant access times are met, the data will be valid by  
clock edge n + m. For example, assuming that the clock  
cycle time is such that all relevant access times are met, If  
a READ command is registered at T0 and the latency is  
programmed to two clocks, the DQs will be valid by T2.  
The MODE REGISTER must be loaded when all banks are  
idle, and the controller must wait the specified time before  
initiating the subsequent operation. Violating either of these  
requirements will result in unspecified operation.  
Reserved states should not be used as unknown operation  
or incompatibility with future versions may result.  
Operating Mode  
Burst Length  
The normal operating mode is selected by setting M7 and  
M8 to zero; the other combinations of values for M7 and  
M8 are reserved for future use and/or test modes. The  
programmed burst length applies to both READ and  
WRITE bursts.  
READ and WRITE accesses to the SDRAM are burst  
oriented, with the burst length being programmable. The  
burst length determines the maximum number of column  
locations that can be accessed for a given READ or WRITE  
command. Burst lengths of 1,2,4 and 8 locations are available  
for both the sequential and the interleaved burst types, and a  
full page burst is available for the sequential burst mode. The  
full-page burst is used in conjunction with the BURST  
TERMINATE command to generate arbitrary burst lengths.  
Test Modes and reserved states should not be used  
because unknown operation or incompatibility with future  
version may result.  
Write Burst Mode  
Reserved states should not be used, aas unknown operation or  
incompatibility with future versions may result.  
When M9=0, the burst length programmed via M0-M2  
applies to both READ and WRITE bursts; when M9=1,  
the programmed burst length applies to READ bursts, but  
WRITE accesses are single-location (non-burst) accesses.  
When a READ or WRITE command is issued, a block of  
columns equal to the burst length is effectively selected. All  
accesses for that burst will wrap within this block, meaning  
that the burst will wrap within the block if a boundary is  
reached. The block is uniquely selected by A2-A8 (each x16)  
when the burst length is set to four; and by A3-A8 (each x16)  
when the burst length is set to eight. The remaining (least  
significant) address bit(s) is (are) used to select the starting  
location within the block. Full-page bursts wrap within the  
page if the boundary is reached.  
Command Inhibit  
The COMMAND INHIBIT function prevents new  
commands from being executed by the SDRAM,  
regardless of whether the CLK signal is enabled. The  
SDRAM is effectively deselected. Operations already in  
progress are not affected.  
No Operation (NOP)  
CAS Latency  
The NO OPERATION (NOP) command is used to  
perform a NOP to an SDRAM which is selected (CS\ is  
LOW). This prevents unwanted commands from being  
registered during IDLE or WAIT states. Operations  
already in progress are not affected.  
The CAS latency is the delay, in clock cycles, between the  
registration of a READ command and the availability of first  
valid data presented on the Output bus (DQ0-DQ79). The  
latency can be set to two or three clocks.  
If a READ command is registered at clock edge n, and the  
latency is m clocks, the data will be available by clock edge  
Austin Semiconductor, Inc.  
Proprietary Material  
ASI Product Marketing  
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