欢迎访问ic37.com |
会员登录 免费注册
发布采购

AS4LC4M16DG-6S/XT 参数 Datasheet PDF下载

AS4LC4M16DG-6S/XT图片预览
型号: AS4LC4M16DG-6S/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 4 MEG ×16 DRAM [4 MEG x 16 DRAM]
分类和应用: 动态存储器
文件页数/大小: 25 页 / 520 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
 浏览型号AS4LC4M16DG-6S/XT的Datasheet PDF文件第17页浏览型号AS4LC4M16DG-6S/XT的Datasheet PDF文件第18页浏览型号AS4LC4M16DG-6S/XT的Datasheet PDF文件第19页浏览型号AS4LC4M16DG-6S/XT的Datasheet PDF文件第20页浏览型号AS4LC4M16DG-6S/XT的Datasheet PDF文件第21页浏览型号AS4LC4M16DG-6S/XT的Datasheet PDF文件第22页浏览型号AS4LC4M16DG-6S/XT的Datasheet PDF文件第24页浏览型号AS4LC4M16DG-6S/XT的Datasheet PDF文件第25页  
DRAM  
AS4LC4M16  
Austin Semiconductor, Inc.  
SELF REFRESH CYCLE  
(Addresses and OE\ = DON’T CARE)  
NOTES:  
1. Once tRASS (MIN) is met and RAS\ remains LOW, the DRAM will enter self refresh mode.  
2. Once tRPS is satisfied, a complete burst of all rows should be executed if RAS\-only or burst CBR refresh is used.  
AS4LC4M16  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 1.0 7/02  
23  
 复制成功!