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AS4LC4M16DG-5S/XT 参数 Datasheet PDF下载

AS4LC4M16DG-5S/XT图片预览
型号: AS4LC4M16DG-5S/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 4 MEG ×16 DRAM [4 MEG x 16 DRAM]
分类和应用: 动态存储器
文件页数/大小: 25 页 / 520 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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DRAM  
AS4LC4M16  
Austin Semiconductor, Inc.  
NOTES:  
1. All voltages referenced to VSS.  
17. tOFF (MAX) defines the time at which the output achieves  
the open circuit condition and is not referenced to VOH or VOL  
.
2. This parameter is sampled. VCC = +3.3V; f = 1 MHz; TA = 25°C. 18. tWCS, tRWD, tAWD, and tCWD are not restrictive operating  
3. ICC is dependent on output loading and cycle rates. parameters. tWCS applies to EARLY WRITE cycles. If  
Specified values are obtained with minimum cycle time and the  
outputs open.  
t
WCS > tWCS (MIN), the cycle is an EARLY WRITE cycle and the  
data output will remain an open circuit throughout the entire  
4. Enables on-chip refresh and address counters.  
5. The minimum specifications are used only to indicate cycle  
time at which proper operation over the full temperature range  
is ensured.  
6. An initial pause of 100µs is required after power-up, followed  
by eight RAS\ refresh cycles (RAS\-ONLY or CBR with WE\  
HIGH), before proper device operation is ensured. The eight  
cycle. tRWD, tAWD, and tCWD define READ-MODIFY-WRITE  
cycles. Meeting these limits allows for reading and disabling  
output data and then applying input data. OE\ held HIGH and  
WE\ taken LOW after CAS\ goes LOW results in a LATE WRITE  
(OE\-controlled) cycle. tWCS, tRWD, tCWD, and tAWD are not  
applicable in a LATE WRITE cycle.  
19. These parameters are referenced to CAS\ leading edge in  
EARLY WRITE cycles and WE\ leading edge in LATE WRITE  
or READ-MODIFY-WRITE operations are not possible.  
20. If OE\ is tied permanently LOW, LATE WRITE, or READ-  
MODIFY-WRITE operations are not possible.  
RAS\ cycle wake-ups should be repeated any time the tREF  
refresh requirements is exceeded.  
7. AC characteristics assume tT = 2.5ns.  
8. VIH (MIN) and VIL (MAX) are reference levels for measuring  
timing of input signals. Transition times are measured between 21. A HIDDEN REFRESH may also be performed after a WRITE  
cycle. In this case, WE\ is LOW and OE\ is HIGH.  
22. RAS\-ONLY REFRESH that all 4,096 rows of the device be  
refreshed at least once every 64ms.  
23. CBR REFRESH for the device requires that at least 4,096  
cycles be completed every 64ms.  
VIH and VIL (or between VIL and VIH).  
9. In addition to meeting the transition rate specification, all  
input signals must transit between VIH and VIL (or between VIL  
and VIH) in a monotonic manner.  
10. If CAS\ and RAS\ = VIH, data output is High-Z.  
24. The DQs go High-Z during READ cycles once tOD or tOFF  
occur. If CAS\ stays LOW while OE\ is brought HIGH, the DQs  
will go High-Z. If OE\ is brought back LOW (CAS\ still LOW),  
the DQs will provide the previous read data.  
11. If CAS\ = VIL, data output may contain data from the last  
valid READ cycle.  
12. Measured with a load equivalent to two TTL gates and  
100pF; and VOL = 0.8V and VOH = 2V.  
25. LATE WRITE and READ-MODIFY-WRITE cycles must  
13. If CAS\ is LOW at the falling edge of RAS\, output data will  
be maintained from the previous cycle. To initiate a new cycle  
and clear the data-out buffer, CAS\ must be pulsed HIGH  
have both tOD and tOEH met (OE\ HIGH during write cycle) in  
order to ensure that the output buffers will be open during the  
WRITE cycle. If OE\ is taken back LOW while CAS\ remains  
LOW, the DQs will remain open.  
for tCP.  
26. Column address changed once each cycle.  
27. The first CAS\ edge to transition LOW.  
14. The tRCD (MAX) limit is no longer specified. tRCD (MAX)  
was specified as a reference point only. If tRCD was greater than  
the specified tRCD (MAX) limit, then access time was controlled  
exclusively by tCAC (tRAC [MIN] no longer applied). With our  
without the tRCD limit, tAA and tCAC must always be met.  
15. The tRAD (MAX) limit is no longer specified. tRAD (MAX)  
was specified as a reference point only. If tRAD was greater than  
the specified tRAD (MAX) limit, then access time was controlled  
exclusively by tAA (tRAC and tCAC no longer applied). With or  
28. Output parameter (DQx) is referenced to corresponding CAS\  
input; DQ0 - DQ7 by CASL\ and DQ8 - DQ15 by CASH\.  
29. Each CASx\ must meet minimum pulse width.  
30. The last CASx\ edge to transition HIGH.  
31. Last falling CASx\ edge to first rising CASx\ edge.  
32. Last rising CASx\ edge to first falling CASx\ edge.  
33. Last rising CASx\ edge to next cycles last rising CASx\  
edge.  
34. Last CASx\ to go LOW.  
without the tRAD (MAX) limit, tAA, tRAC, and tCAC must always  
be met.  
Notes continued on next page.  
16. Either tRCH or tRRH must be satisfied for a READ cycle.  
*64ms for IT version, 32ms for XT version.  
AS4LC4M16  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 1.0 7/02  
11