DRAM
AS4LC4M16
Austin Semiconductor, Inc.
The row address is latched by the RAS\ signal, then the
column address is latched by CAS\. This device provides
EDO-PAGE-MODE operation, allowing for fast successive data
operations (READ, WRITE or READ-MODIFY-WRITE) within
a given row.
GENERAL DESCRIPTION
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic
random-access memory device containing 67,108,864 bits and
designed to operate from 3V to 3.6V. The device is functionally
organized as 4,194,304 locations containing 16 bits each. The
4,194,304 memory locations are arranged in 4,096 rows by 1,024
columns. During READ or WRITE cycles, each location is
uniquely addresses via the address bits: 12 row-address bits
(A0 - A11) and 10 column-address bits (A0 - A9). In addition,
both byte and word accesses are supported via the two CAS\
pins (CASL\ and CASH\).
The 4 Meg x 16 DRAM must be refreshed periodically in
order to retain stored data.
DRAM ACCESS
Each location in the DRAM is uniquely addressable, as
mentioned in the General Description. Use of both CAS\
The CAS\ functionality and timing related to address and signals resulted in a word access via the 16 I/O pins
control functions (e.g., latching column addresses or selecting (DQ0 - DQ15). Using only one of the two signals results in a
CBR REFRESH) is such that the internal CAS\ signal is BYTE access cycle. CASL\ transitioning LOW selects an
determined by the first external CAS\ signal (CASL\ or CASH\) access cycle for the lower byte (DQ0 - DQ7), and CASH\
to transition LOW and the last to transition back HIGH. The transitioning LOW selects an access cycle for the upper byte
CAS\ functionality and timing related to driving or latching data (DQ8-DQ15). General byte and word access timing is shown in
is such that each CAS\ signal independently controls the Figures 1 and 2.
associated either DQ pins.
FIGURE 1: WORD and BYTE WRITE Example
AS4LC4M16
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 1.1 6/05
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