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AS4DDR264M65PBG1R-38/IT 参数 Datasheet PDF下载

AS4DDR264M65PBG1R-38/IT图片预览
型号: AS4DDR264M65PBG1R-38/IT
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mx64 DDR2 SDRAM瓦特/双控总线集成塑封微电路 [64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 28 页 / 242 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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iPEM  
4.2 Gb SDRAM-DDR2  
Austin Semiconductor, Inc.  
AS4DDR264M65PBG1  
FIGURE 12 - WRITE COMMAND  
CK#  
CK  
CKE  
CS#  
HIGH  
RAS#  
CAS#  
WE#  
ADDRESS  
A10  
CA  
EN AP  
DIS AP  
BANK ADDRESS  
BA  
DON’T CARE  
Note: CA = column address; BA = bank address; EN AP = enable auto precharge; and  
DIS AP = disable auto precharge.  
TABLE 4 - WRITE USING CONCURRENTAUTO PRECHARGE  
Minimum Delay (With Concurrent  
From Command (Bank n )  
To Command (Bank m )  
Units  
Auto Precharge)  
(CL-1) + (BL/2) + tWTR  
tCK  
tCK  
tCK  
READ OR READ w/ AP  
WRITE OR WRITE w/ AP  
PRECHARGE or ACTIVE  
WRITE with Auto Precharge  
(BL/2)  
1
Austin Semiconductor, Inc.  
Austin, Texas  
512.339.1188  
www.austinsemiconductor.com  
AS4DDR264M65PBG1  
Rev. 0.5 06/08  
18  
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