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AS4DDR232M72PBGR-38/ET 参数 Datasheet PDF下载

AS4DDR232M72PBGR-38/ET图片预览
型号: AS4DDR232M72PBGR-38/ET
PDF下载: 下载PDF文件 查看货源
内容描述: 32Mx72 DDR2 SDRAM集成塑封微电路 [32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 28 页 / 237 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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iPEM  
2.4 Gb SDRAM-DDR2  
Austin Semiconductor, Inc.  
AS4DDR232M72PBG  
following two sets of conditions (A or B) must be met to  
obtain a stable supply state (stable supply defi ned as  
2. For a minimum of 200 µs after stable power nd clock  
(CK, CK#), apply NOP or DESELECT commands and  
take CKE HIGH.  
3. Wait a minimum of 400ns, then issue a PRECHARGE  
ALL command.  
4. Issue an LOAD MODE command to the EMR(2). (To  
issue an EMR(2) command, provide LOW to BA0,  
provide HIGH to BA1.)  
5. Issue a LOAD MODE command to the EMR(3). (To  
issue an EMR(3) command, provide HIGH to BA0 and  
BA1.)  
6. Issue an LOAD MODE command to the EMR to enable  
DLL. To issue a DLLENABLE command, provide LOW  
to BA1 andA0, provide HIGH to BA0. Bits E7, E8, and  
E9 can be set to “0” or “1”; Micron recommends setting  
them to “0”.  
7. Issue a LOAD MODE command for DLL RESET. 200  
cycles of clock input is required to lock the DLL. (To  
issue a DLL RESET, provide HIGH to A8 and provide  
LOW to BA1, and BA0.) CKE must be HIGH the entire  
time.  
V
, VCCQ, VREF, and VTT are between their  
mCinCimum and maximum values as stated in Table20);  
A. (single power source) The VCC voltage ramp from  
300mV to VCC (MIN) must take no longer than  
200ms; during the VCC voltage ramp, |VCC - VCCQ|  
± 0.3V. Once supply voltage ramping is complete  
(when VCCQ crosses VCC (MIN)), Table 20  
specifications apply.  
• VCC, V are driven from a single power converter  
outputCCQ  
• VTT is limited to 0.95V MAX  
• VREF tracks VCCQ/2; VREF must be within  
± 0.3V with respect to VCCQ/2 during supply ramp  
time  
• VCCQ > VREF at all times  
B. (multiple power sources) V > VCCQ must be  
maintained during supply voltaCgCe ramping, for both  
AC and DC levels, until supply voltage ramping  
completes (VCCQ crosses VCC [MIN]). Once supply  
voltage ramping is complete, Table 20 specifications  
apply.  
8. Issue PRECHARGEALL command.  
9. Issue two or more REFRESH commands, followed  
by a dummy WRITE.  
• Apply VCC before or at the same time as  
VCCQ; VCC voltage ramp time must be < 200ms  
from when VCC ramps from 300mV to VCC (MIN)  
• Apply VCCQ before or at the same time as VTT; the  
VCCQ voltage ramp time from when VCC (MIN) is  
achieved to when VCCQ (MIN) is achieved must be  
<500ms; while VCC is ramping, current can be  
supplied from VCC through the device to VCCQ  
• VREF must track VCCQ/2, VREF must be within  
± 0.3V with respect to VCCQ/2 during supply ramp  
time; VCCQ > VREF must be met at all times  
• Apply VTT; The VTT voltage ramp time from when  
VCCQ (MIN) is achieved to when VTT (MIN) is achieved  
must be no greater than 500ms  
Austin Semiconductor, Inc.  
Austin, Texas 512.339.1188 www.austinsemiconductor.com  
AS4DDR232M72PBG  
Rev. 2.0 5/07  
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