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AS29LV016JBRGR-70/ET 参数 Datasheet PDF下载

AS29LV016JBRGR-70/ET图片预览
型号: AS29LV016JBRGR-70/ET
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
AC CHARACTERISTICS  
Enter  
Erase  
Enter Erase  
Suspend Program  
Embedded  
Erase  
Resume  
Suspend  
Erasing  
Erase  
Erase Suspend  
Read  
Erase  
Suspend  
Program  
Erase  
Complete  
WE#  
Erase  
Erase Suspend  
Read  
DQ6  
DQ2  
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an  
erase-suspended sector.  
Figure 20. DQ2 vs. DQ6 for Erase and Erase Suspend Operations  
Temporary Sector Unprotect  
Parameter  
JEDEC  
Std  
Description  
ID Rise and Fall Time1  
Test Setup  
Min  
All Speed Options  
Unit  
ns  
tVIDR  
500  
V
tRSP RESET# Setup Time for Temporary Sector Unprotect  
4
Min  
µs  
RESET# Hold Time from RY/BY# High for Temporary  
tRRB  
4
Min  
µs  
Sector Unprotected  
Note:  
1. Not 100% Tested.  
12 V  
RESET#  
0 or 3 V  
tVIDR  
tVIDR  
Program or Erase Command Sequence  
CE#  
WE#  
tRSP  
RY/BY#  
Figure 21. Temporary Sector Unprotect/Timing Diagram  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
35  
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