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AS29LV016JBRGR-70/ET 参数 Datasheet PDF下载

AS29LV016JBRGR-70/ET图片预览
型号: AS29LV016JBRGR-70/ET
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8位/ 1M ×16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 40 页 / 408 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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COTS PEM  
BOOT SECTOR FLASH  
Austin Semiconductor, Inc.  
AS29LV016J  
Table 8: Primary Vendor-Specific Extended Query  
Addresses  
(Word Mode)  
40h  
Addresses  
(Byte Mode)  
80h  
Data  
Description  
Query-unique ASCII string "PRI"  
0050h  
0052h  
0049h  
0031h  
0033h  
41h  
42h  
43h  
44h  
82h  
84h  
86h  
88h  
Major version number, ASCII  
Major version number, ASCII  
Address Sensitive Unlock  
0=Required, 1=Not Required  
45h  
8Ah  
000Ch  
Erase Suspend  
46h  
8Ch  
0002h  
0=Not Supported, 1=To Read Only, 2=To Read and Write  
Sector Protect  
47h  
48h  
8Eh  
90h  
0001h  
0001h  
0=Not Supported, X=Number of Sectors Per Group  
Sector Temorary Unprotect  
00=Not Supported, 01=Supported  
Sector Protect / Unprotect Scheme  
01=29F040 mode, 02=29F016 mode,  
03=29F400 mode, 04=29LV800A mode  
Simultaneous Operation  
49h  
92h  
0004h  
4Ah  
4Bh  
4Ch  
94h  
96h  
98h  
0000h  
0000h  
0000h  
00=Not Supported, 01=Supported  
Burst Mode Type  
00=Not Supported, 01= Supported  
Page Mode Type  
00=Not Supported, 01=4 Word Page, 02= 8 Word Page  
ACC (Acceleration) Supply Minimum  
4Dh  
4Eh  
9Ah  
9Ch  
0000h  
0000h  
00=Not Supported, D7-D4: Volt, D3-D0; 100mV  
ACC (Acceleration) Supply Minimum  
00=Not Supported, D7-D4: Volt, D3-D0; 100mV  
HARDWARE DATA PROTECTION  
The command sequence requirement of unlock cycles  
for programming or erasing provides data protection against  
inadvertent writes (refer toTable 9 on page 21 for command  
definitions). In addition, the following hardware data  
protection measures prevent accidental erasure or  
programming, which might otherwise be caused by  
spurious system level signals during VCC power-up and  
power-down transitions, or from system noise.  
WRITE PULSE GLITCH PROTECTION  
Noise pulses of less than 5 ns (typical) on OE#, CE# or  
WE# do not initiate a write cycle.  
LOGICAL INHIBIT  
Write cycles are inhibited by holding any one of OE# =  
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,  
CE# and WE# must be a logical zero while OE# is a  
logical one.  
LOW VCC WRITE INHIBIT  
When VCC is less than VLKO, the device does not accept  
any write cycles. This protects data during VCC power-up  
and power-down. The command register and all internal  
program/erase circuits are disabled, and the device resets.  
Subsequent writes are ignored until VCC is greater than  
VLKO. The system must provide the proper signals to the  
control pins to prevent unintentional writes when VCC is  
POWER-UP WRITE INHIBIT  
If WE# = CE# = VIL and OE# = VIH during power up, the  
device does not accept commands on the rising edge of  
WE#. The internal state machine is automatically reset  
to reading array data on power-up.  
greater than VLKO  
.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS29LV016J  
Rev. 0.0 02/09  
16  
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