COTS PEM
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016
GENERAL DESCRIPTION
The AS29LV016 is a 16 Mbit, 3.0 Volt-only Flash
memory organized as 2,097,152 bytes or
1,048,576 words. The word-wide data (x16)
appears on DQ15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device is designed to
be programmed in-system with the standard
system 3.0 volt VCC supply. A 12.0 V VPP or 5.0
VCC are not required for write or erase operations.
The device can also be programmed in standard
EPROM programmers.
already programmed) before executing the erase
operation. During erase, the device automatically
times the erase pulse widths and verifies proper
cell margin.
The host system can detect whether a program
or erase operation is complete by observing the
RY/BY# pin, or by reading the DQ7 (Data# Polling)
and DQ6 (toggle) status bits. After a program or
erase cycle has been completed, the device is
ready to read array data or accept another
command.
The device offers access times of 70 ns, 90 ns
and 100 ns allowing high speed microprocessors
to operate without wait states. To eliminate bus
contention the device has separate chip enable
(CE#), write enable (WE#) and output enable
(OE#) controls.
The sector erase architecture allows memory
sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The
device is fully erased when shipped from the
factory.
The device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided
for the program and erase operations.
Hardware data protection measures include a low
VCC detector that automatically inhibits write
operations during power transitions. The hardware
sector protection feature disables both program
and erase operations in any combination of the
sectors of memory. This can be achieved in-system
or via programming equipment.
The AS29LV016 is entirely command set
compatible with the JEDEC single-power-supply
Flash standard. Commands are written to the
command register using standard microprocessor
write timings. Register contents serve as input
to an internal state-machine that controls the
erase and programming circuitry. Write cycles also
internally latch addresses and data needed for
the programming and erase operations. Reading
data out of the device is similar to reading from
other Flash or EPROM devices.
The Erase Suspend/Erase Resume feature enables
the user to put erase on hold for any period of
time to read data from, or program data to, any
sector that is not selected for erasure. True
background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine
to reading array data. The RESET# pin may be
tied to the system reset circuitry. A system reset
would thus also reset the device, enabling the
system microprocessor to read the boot-up
firmware from the Flash memory.
Device programming occurs by executing the
program command sequence. This initiates the
Embedded Program algorithm—an internal
algorithm that automatically times the program
pulse widths and verifies proper cell margin. The
Unlock Bypass mode facilitates faster programming
times by requiring only two write cycles to program
data instead of four.
The device offers two power-saving features.
When addresses have been stable for a specified
amount of time, the device enters the automatic
sleep mode. The system can also place the device
into the standby mode. Power consumption is
greatly reduced in both these modes.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that
automatically preprograms the array (if it is not
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
AS29LV016
Rev. 2.1 10/08
2
AUSTIN [ AUSTIN SEMICONDUCTOR ]
