FLASH
AS29F040
Austin Semiconductor, Inc.
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
1
2
TYP
MAX
UNIT
PARAMETER
COMMENTS
Sector Erase Time
1
8
sec
4
Excludes 00h programming prior to erasure
Chip Erase Time
8
7
64
sec
µs
Byte Programming Time
300
5
Excludes system-level overhead
3
3ꢀ6
10ꢀ8
sec
Chip Programming Time
NOTES:
1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 1 million cycles. Additionally, programming typicals
assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5V; 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set DQ5 = 1.
See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further
information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1 million cycles.
LATCHUP CHARACTERISTIC
PARAMETER
MIN
MAX
V + 1ꢀ0V
CC
Input voltage with respect to V on all I/O pins
-1ꢀ0V
SS
V
Current
-100mA
+100mA
CC
NOTES: Includes all pins except VCC
.
Test conditions: VCC = 5.0V, one pin at a time.
PIN CAPACITANCE
PARAMETER
CONDITIONS SYMBOL
= 0
TYP
MAX
UNIT
Input Capacitance
V
C
4
6
pF
IN
IN
Output Capacitance
V
= 0
C
8
8
12
12
pF
pF
OUT
OUT
Control Pin Capacitance
V
= 0
C
IN2
PP
NOTES:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz
DATARETENTION
PARAMETER
CONDITIONS
150°C
MIN
10
20
UNIT
Years
Years
Minimum Pattern Data Retention Time
125°C
AS29F040
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 2.2 09/07
21
AUSTIN [ AUSTIN SEMICONDUCTOR ]
