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AS29F040ECA-60/883C 参数 Datasheet PDF下载

AS29F040ECA-60/883C图片预览
型号: AS29F040ECA-60/883C
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8 FLASH制服行业5.0V FLASH MEMORY [512K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY]
分类和应用:
文件页数/大小: 27 页 / 1428 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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FLASH  
AS29F040  
Austin Semiconductor, Inc.  
ERASE AND PROGRAMMING PERFORMANCE  
LIMITS  
1
2
TYP  
MAX  
UNIT  
PARAMETER  
COMMENTS  
Sector Erase Time  
1
8
sec  
4
Excludes 00h programming prior to erasure  
Chip Erase Time  
8
7
64  
sec  
µs  
Byte Programming Time  
300  
5
Excludes system-level overhead  
3
3ꢀ6  
10ꢀ8  
sec  
Chip Programming Time  
NOTES:  
1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 1 million cycles. Additionally, programming typicals  
assume checkerboard pattern.  
2. Under worst case conditions of 90°C, VCC = 4.5V; 1,000,000 cycles.  
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster  
than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device set DQ5 = 1.  
See the section on DQ5 for further information.  
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.  
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for further  
information on command definitions.  
6. The device has a minimum guaranteed erase and program cycle endurance of 1 million cycles.  
LATCHUP CHARACTERISTIC  
PARAMETER  
MIN  
MAX  
V + 1ꢀ0V  
CC  
Input voltage with respect to V on all I/O pins  
-1ꢀ0V  
SS  
V
Current  
-100mA  
+100mA  
CC  
NOTES: Includes all pins except VCC  
.
Test conditions: VCC = 5.0V, one pin at a time.  
PIN CAPACITANCE  
PARAMETER  
CONDITIONS SYMBOL  
= 0  
TYP  
MAX  
UNIT  
Input Capacitance  
V
C
4
6
pF  
IN  
IN  
Output Capacitance  
V
= 0  
C
8
8
12  
12  
pF  
pF  
OUT  
OUT  
Control Pin Capacitance  
V
= 0  
C
IN2  
PP  
NOTES:  
1. Sampled, not 100% tested.  
2. Test conditions TA = 25°C, f = 1.0 MHz  
DATARETENTION  
PARAMETER  
CONDITIONS  
150°C  
MIN  
10  
20  
UNIT  
Years  
Years  
Minimum Pattern Data Retention Time  
125°C  
AS29F040  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 2.2 09/07  
21  
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