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AS29F010
Austin Semiconductor, Inc.
Afaeꢂ ahe ꢃecapꢂ eꢂrꢃe cpmmrnd ꢃeqsence iꢃ oꢂiaaen, ahe
ꢃꢄꢃaem ꢃhpsld ꢂerd ahe ꢃarasꢃ pn DQ7 (Drar\ Pplling) pꢂ DQ6
(Tpggle Bia I) ap enꢃsꢂe ahe device hrꢃ rcceꢁaed ahe cpmmrnd
ꢃeqsence, rnd ahen ꢂerd DQ3. If DQ3 iꢃ “±”, ahe inaeꢂnrllꢄ
cpnaꢂplled eꢂrꢃe cꢄcle hrꢃ begsn; rll fsꢂaheꢂ cpmmrndꢃ rꢂe
ignpꢂed snail ahe eꢂrꢃe pꢁeꢂraipn iꢃ cpmꢁleae. If DQ3 iꢃ “0”, ahe
device oill rcceꢁa rddiaipnrl ꢃecapꢂ eꢂrꢃe cpmmrndꢃ. Tp
enꢃsꢂe ahe cpmmrnd hrꢃ been rcceꢁaed, ahe ꢃꢄꢃaem ꢃpfaorꢂe
ꢃhpsld check ahe ꢃarasꢃ pf DQ3 ꢁꢂipꢂ ap rnd fpllpoing erch
ꢃsbꢃeqsena ꢃecapꢂ eꢂrꢃe cpmmrnd. If DQ3 iꢃ high pn ahe
ꢃecpnd ꢃarasꢃ check, ahe lrꢃa cpmmrnd migha npa hrve been
rcceꢁaed. Trble 5 ꢃhpoꢃ ahe psaꢁsaꢃ fpꢂ DQ3.
DQ3: Sector Erase Timer
Afaeꢂ oꢂiaing r ꢃecapꢂ eꢂrꢃe cpmmrnd ꢃeqsence, ahe
ꢃꢄꢃaem mrꢄ ꢂerd DQ3 ap deaeꢂmine oheaheꢂ pꢂ npa rn eꢂrꢃe
pꢁeꢂraipn hrꢃ begsn. (The ꢃecapꢂ eꢂrꢃe aimeꢂ dpeꢃ npa rꢁꢁlꢄ ap
ahe chiꢁ eꢂrꢃe cpmmrnd.) If rddiaipnrl ꢃecapꢂꢃ rꢂe ꢃelecaed fpꢂ
eꢂrꢃsꢂe, ahe enaiꢂe aime-psa rlꢃp rꢁꢁlieꢃ rfaeꢂ erch rddiaipnrl
ꢃecapꢂ eꢂrꢃe cpmmrnd. When ahe aime-psa iꢃ cpmꢁleae, DQ3
ꢃoiacheꢃ fꢂpm “0” ap “±.” The ꢃꢄꢃaem mrꢄ ignpꢂe DQ3 if ahe
ꢃꢄꢃaem crn gsrꢂrnaee ahra ahe aime beaoeen rddiaipnrl ꢃecapꢂ
eꢂrꢃe cpmmrndꢃ oill rlorꢄꢃ be leꢃꢃ ahrn 50µꢃ. See rlꢃp ahe
“Secapꢂ Eꢂrꢃe Cpmmrnd Seqsence” ꢃecaipn.
TABLE 5: WRITE OPERATION STATUS
1
2
OPERATION
DQ6
Toggle
Toggle
No toggle
Data
DQ3
N/A
1
DQ7
DQ5
Embedded Program Algorithm
DQ7\
0
0
Standard
Mode
Embedded Erase Algorithm
0
0
Erase
Suspend
Mode
Reading within Erase Suspended Sector
Reading within Non-Erase Suspended Sector
1
N/A
Data
Data
Data
NOTES:
±. DQ7 ꢂeqsiꢂeꢃ r vrlid rddꢂeꢃꢃ ohen ꢂerding ꢃarasꢃ infpꢂmraipn. Refeꢂ ap ahe rꢁꢁꢂpꢁꢂirae ꢃsbꢃecaipn fpꢂ fsꢂaheꢂ dearilꢃ.
2. DQ5 ꢃoiacheꢃ ap ‘±’ ohen rn Embedded Pꢂpgꢂrm pꢂ Embedded Eꢂrꢃe pꢁeꢂraipn hrꢃ exceeded ahe mrximsm aiming limiaꢃ. See “DQ5:
Exceeding Timing Limiaꢃ” fpꢂ mpꢂe infpꢂmraipn.
ABSOLUTE MAXIMUM RATINGS*
AmbienaTemꢁeꢂrasꢂe oiah PpoeꢂAꢁꢁlied............-55°C ap +±25°C
Vplarge oiah Reꢃꢁeca ap Gꢂpsnd
VCC±.................................................................-2.0Vap+7.0V
A92................................................................-2.0Vap+±3.0V
All paheꢂ ꢁinꢃ±...............................................-2.0V ap +7.0V
Osaꢁsa Shpꢂa Ciꢂcsia Csꢂꢂena3..................................................200mA
VCC SsꢁꢁlꢄVplarge..................................................+4.50Vap +5.50V
SapꢂrgeTemꢁeꢂrasꢂe..................................................-65°C ap +±25°C
FIGURE 5: Maximum Negative
Overshoot Waveform
NOTES:
±. Minimsm DC vplarge pn inꢁsa pꢂ I/O ꢁin iꢃ -0.5V. Dsꢂing vplarge aꢂrnꢃiaipnꢃ, inꢁsa
mrꢄ pveꢂꢃhppa V ap -2.0V fpꢂ ꢁeꢂipdꢃ pf sꢁ ap 20nꢃ. See Figsꢂe 5. Mrximsm DC vplarge
SS
pn inꢁsa rnd I/O ꢁinꢃ iꢃ V + 0.5V. Dsꢂing vplarge aꢂrnꢃiaipnꢃ, inꢁsa rnd I/O ꢁinꢃ mrꢄ
CC
pveꢂꢃhppa V + 2.0V fpꢂ ꢁeꢂipdꢃ sꢁ ap 20nꢃ. See Figsꢂe 6.
CC
2. Minimsm DC vplarge pn A9 ꢁin iꢃ -0.5V. Dsꢂing vplarge aꢂrnꢃiaipnꢃ, A9 ꢁinꢃ mrꢄ
pveꢂꢃhppa V ap -2.0V fpꢂ ꢁeꢂipdꢃ pf sꢁ ap 20nꢃ. See Figsꢂe 5. Mrximsm DC inꢁsa
SS
vplarge pn A9 iꢃ +±2.5V ohich mrꢄ pveꢂꢃhppa ap ±4.0V fpꢂ ꢁeꢂipdꢃ sꢁ ap 20nꢃ.
3. Np mpꢂe ahrn pne psaꢁsa ꢃhpꢂaed ra r aime. Dsꢂraipn pf ahe ꢃhpꢂa ciꢂcsia ꢃhpsld npa be
gꢂeraeꢂ ahrn pne ꢃecpnd.
*Saꢂeꢃꢃeꢃ gꢂeraeꢂ ahrn ahpꢃe liꢃaed sndeꢂ "Abꢃplsae Mrximsm Rraingꢃ"
mrꢄ crsꢃe ꢁeꢂmrnena drmrge ap ahe device. Thiꢃ iꢃ r ꢃaꢂeꢃꢃ ꢂraing pnlꢄ
rnd fsncaipnrl pꢁeꢂraipn pf ahe device ra aheꢃe pꢂ rnꢄ paheꢂ cpndiaipnꢃ
rbpve ahpꢃe indicraed in ahe pꢁeꢂraipn ꢃecaipn pf ahiꢃ ꢃꢁecificraipn iꢃ npa
imꢁlied. Exꢁpꢃsꢂe ap rbꢃplsae mrximsm ꢂraing cpndiaipnꢃ fpꢂ exaended
FIGURE 6: Maximum Positive
Overshoot Waveform
ꢁeꢂipdꢃ mrꢄ rffeca ꢂelirbiliaꢄ.
AS29F010
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 2.3 12/08
12
AUSTIN [ AUSTIN SEMICONDUCTOR ]
