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AS29F010F-50/883C 参数 Datasheet PDF下载

AS29F010F-50/883C图片预览
型号: AS29F010F-50/883C
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 FLASH制服行业5.0V FLASH MEMORY [128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY]
分类和应用:
文件页数/大小: 26 页 / 521 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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FLASH  
AS29F010  
Austin Semiconductor, Inc.  
Undeꢂ ahiꢃ cpndiaipn, ahe device hrlaꢃ ahe pꢁeꢂraipn, rnd ohen  
ahe pꢁeꢂraipn hrꢃ exceeded ahe aiming limiaꢃ, DQ5 ꢁꢂpdsceꢃ r  
“±.”  
Undeꢂ bpah aheꢃe cpndiaipnꢃ, ahe ꢃꢄꢃaem msꢃa iꢃꢃse ahe  
ꢂeꢃea cpmmrnd ap ꢂeasꢂn ahe device ap ꢂerding rꢂꢂrꢄ drar.  
ꢃelecaed fpꢂ eꢂrꢃing rꢂe ꢁꢂpaecaed, DQ6 apggleꢃ fpꢂ  
rꢁꢁꢂpximraelꢄ ±00µꢃ, ahen ꢂeasꢂnꢃ ap ꢂerding rꢂꢂrꢄ drar. If npa  
rll ꢃelecaed ꢃecapꢂꢃ rꢂe ꢁꢂpaecaed, ahe Embedded Eꢂrꢃe  
rlgpꢂiahm eꢂrꢃeꢃ ahe snꢁꢂpaecaed ꢃecapꢂꢃ, rnd ignpꢂeꢃ ahe  
ꢃelecaed ꢃecapꢂꢃ ahra rꢂe ꢁꢂpaecaed.  
If r ꢁꢂpgꢂrm rddꢂeꢃꢃ frllꢃ oiahin r ꢁꢂpaecaed ꢃecapꢂ, DQ6  
apggleꢃ fpꢂ rꢁꢁꢂpximraelꢄ 2µꢃ rfaeꢂ ahe ꢁꢂpgꢂrm cpmmrnd  
ꢃeqsence iꢃ oꢂiaaen, ahen ꢂeasꢂnꢃ ap ꢂerding rꢂꢂrꢄ drar.  
The Wꢂiae Oꢁeꢂraipn Sarasꢃ arble ꢃhpoꢃ ahe psaꢁsaꢃ fpꢂ  
Tpggle Bia I pn DQ6. Refeꢂ ap Figsꢂe 4 fpꢂ ahe apggle bia  
rlgpꢂiahm, rnd ap ahe Tpggle Bia Timingꢃ figsꢂe in ahe “AC  
Chrꢂrcaeꢂiꢃaicꢃ” ꢃecaipn fpꢂ ahe aiming dirgꢂrm.  
FIGURE 4: TOGGLE BIT ALGORITHM  
Reading Toggle Bit DQ6  
Refeꢂ ap Figsꢂe 4 fpꢂ ahe fpllpoing diꢃcsꢃꢃipn. Wheneveꢂ  
ahe ꢃꢄꢃaem iniairllꢄ beginꢃ ꢂerding apggle bia ꢃarasꢃ, ia msꢃa  
ꢂerd DQ7-DQ0 ra lerꢃa aoice in r ꢂpo ap deaeꢂmine oheaheꢂ r  
apggle bia iꢃ apggling. Tꢄꢁicrllꢄ, r ꢃꢄꢃaem opsld npae rnd ꢃapꢂe  
ahe vrlse pf ahe apggle bia rfaeꢂ ahe fiꢂꢃa ꢂerd. Afaeꢂ ahe ꢃecpnd  
ꢂerd, ahe ꢃꢄꢃaem opsld cpmꢁrꢂe ahe neo vrlse pf ahe apggle bia  
oiah ahe fiꢂꢃa. If ahe apggle bia iꢃ npa apggling, ahe device hrꢃ  
cpmꢁleaed ahe ꢁꢂpgꢂrm pꢂ eꢂrꢃe pꢁeꢂraipn. The ꢃꢄꢃaem crn  
ꢂerd rꢂꢂrꢄ drar pn DQ7-DQ0 pn ahe fpllpoing ꢂerd cꢄcle.  
Hpoeveꢂ, if rfaeꢂ ahe iniairl aop ꢂerd cꢄcleꢃ, ahe ꢃꢄꢃaem  
deaeꢂmineꢃ ahra ahe apggle bia iꢃ ꢃaill apggling, ahe ꢃꢄꢃaem rlꢃp  
ꢃhpsld npae oheaheꢂ ahe vrlse pf DQ5 iꢃ high (ꢃee ahe ꢃecaipn  
pn DQ5). If ia iꢃ, ahe ꢃꢄꢃaem ꢃhpsld ahen deaeꢂmine rgrin oheaheꢂ  
ahe apggle bia iꢃ apggling, ꢃince ahe apggle bia mrꢄ hrve ꢃapꢁꢁed  
apggling jsꢃa rꢃ DQ5 oena high. If ahe apggle bia iꢃ np lpngeꢂ  
apggling, ahe device hrꢃ ꢃscceꢃꢃfsllꢄ cpmꢁleaed ahe ꢁꢂpgꢂrm  
pꢂ eꢂrꢃe pꢁeꢂraipn. If ia iꢃ ꢃaill apggling, ahe device did npa  
cpmꢁleae ahe pꢁeꢂraipn ꢃscceꢃꢃfsllꢄ, rnd ahe ꢃꢄꢃaem msꢃa oꢂiae  
ahe ꢂeꢃea cpmmrnd ap ꢂeasꢂn ap ꢂerding rꢂꢂrꢄ drar.  
The ꢂemrining ꢃcenrꢂip iꢃ ahra ahe ꢃꢄꢃaem iniairllꢄ  
deaeꢂmineꢃ ahra ahe apggle bia ia apggling rnd DQ5 hrꢃ npa gpne  
high. The ꢃꢄꢃaem mrꢄ cpnainse ap mpniapꢂ ahe apggle bia rnd  
DQ5 ahꢂpsgh ꢃscceꢃꢃive ꢂerd cꢄcleꢃ, deaeꢂmining ahe ꢃarasꢃ rꢃ  
deꢃcꢂibed in ahe ꢁꢂevipsꢃ ꢁrꢂrgꢂrꢁh. Alaeꢂnraivelꢄ, ia mrꢄ  
chppꢃe ap ꢁeꢂfpꢂm paheꢂ ꢃꢄꢃaem arꢃkꢃ. In ahiꢃ crꢃe, ahe ꢃꢄꢃaem  
msꢃa ꢃarꢂa ra ahe beginning pf ahe rlgpꢂiahm ohen ia ꢂeasꢂnꢃ ap  
deaeꢂmine ahe ꢃarasꢃ pf ahe pꢁeꢂraipn (apꢁ pf Figsꢂe 4).  
DQ5: Exceeded Timing Limits  
DQ5 indicraeꢃ oheaheꢂ ahe ꢁꢂpgꢂrm pꢂ eꢂrꢃe aime hrꢃ  
exceeded r ꢃꢁecified inaeꢂnrl ꢁslꢃe cpsna limia. Undeꢂ aheꢃe  
cpndiaipnꢃ DQ5 ꢁꢂpdsceꢃ r “±.” Thiꢃ iꢃ r frilsꢂe cpndiaipn ahra  
indicraeꢃ ahe ꢁꢂpgꢂrm pꢂ eꢂrꢃe cꢄcle orꢃ npa ꢃscceꢃꢃfsllꢄ  
cpmꢁleaed.  
The DQ5 frilsꢂe cpndiaipn mrꢄ rꢁꢁerꢂ if ahe ꢃꢄꢃaem aꢂieꢃ ap  
ꢁꢂpgꢂrm r “±” ap r lpcraipn ahra iꢃ ꢁꢂevipsꢃlꢄ ꢁꢂpgꢂrmmed ap  
“0.” Onlꢄ rn eꢂrꢃe pꢁeꢂraipn crn chrnge r “0” brck ap r “±.”  
NOTE:  
±) Rerd apggle bia aoice ap deaeꢂmine oheaheꢂ pꢂ npa ia iꢃ apggling. See  
aexa.  
2) Recheck apggle bia becrsꢃe ia mrꢄ ꢃapꢁ apggling rꢃ DQ5 chrngeꢃ ap  
“±”. See aexa.  
AS29F010  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 2.3 12/08  
11  
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