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AS29F010DCG-150/883C 参数 Datasheet PDF下载

AS29F010DCG-150/883C图片预览
型号: AS29F010DCG-150/883C
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 FLASH制服行业5.0V FLASH MEMORY [128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY]
分类和应用: 内存集成电路光电二极管
文件页数/大小: 26 页 / 521 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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FLASH  
AS29F010  
Austin Semiconductor, Inc.  
npn-ꢃsꢃꢁended ꢃecapꢂꢃ. The ꢃꢄꢃaem crn deaeꢂmine ahe ꢃarasꢃ ꢂeveꢂaꢃ ap ahe Eꢂrꢃe Ssꢃꢁend mpde, rnd iꢃ ꢂerdꢄ fpꢂ rnpaheꢂ  
pf ahe ꢁꢂpgꢂrm pꢁeꢂraipn sꢃing ahe DQ7 pꢂ DQ6 ꢃarasꢃ biaꢃ, jsꢃa vrlid pꢁeꢂraipn. See “Asapꢃeleca Cpmmrnd Seqsence” fpꢂ mpꢂe  
rꢃ in ahe ꢃarndrꢂd ꢁꢂpgꢂrm pꢁeꢂraipn. See “Wꢂiae Oꢁeꢂraipn infpꢂmraipn.  
Sarasꢃ” fpꢂ mpꢂe infpꢂmraipn.  
The ꢃꢄꢃaem msꢃa oꢂiae ahe Eꢂrꢃe Reꢃsme cpmmrnd  
The ꢃꢄꢃaem mrꢄ rlꢃp oꢂiae ahe rsapꢃeleca cpmmrnd (rddꢂeꢃꢃ biaꢃ rꢂe “dpn’a crꢂe”) ap exia ahe eꢂrꢃe ꢃsꢃꢁend mpde  
ꢃeqsence ohen ahe device iꢃ in ahe Eꢂrꢃe Ssꢃꢁend mpde. The rnd cpnainse ahe ꢃecapꢂ eꢂrꢃe pꢁeꢂraipn. Fsꢂaheꢂ oꢂiaeꢃ pf ahe  
device rllpoꢃ ꢂerding rsapꢃeleca cpdeꢃ even ra rddꢂeꢃꢃeꢃ oiahin Reꢃsme cpmmrnd rꢂe ignpꢂed. Anpaheꢂ Eꢂrꢃe Ssꢃꢁend  
eꢂrꢃing ꢃecapꢂꢃ, ꢃince ahe cpdeꢃ rꢂe npa ꢃapꢂed in ahe mempꢂꢄ cpmmrnd crn be oꢂiaaen rfaeꢂ ahe device hrꢃ ꢂeꢃsmed eꢂrꢃing.  
rꢂꢂrꢄ. When ahe device exiaꢃ ahe rsapꢃeleca mpde, ahe device  
TABLE 4: Command Definitions  
2,3  
Bus Cycles  
Third  
1
Command Sequence  
First  
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data  
RA RD  
Second  
Fourth  
Fifth  
Sixth  
4
1
1
3
Read  
5
6
XXXX F0  
Reset  
Reset  
555  
AA  
2AA  
55  
555  
F0  
Manufacturer ID  
Device ID  
4
4
555  
555  
AA  
AA  
2AA  
2AA  
55  
55  
555  
555  
90  
90  
X00  
X01  
1
20  
7
Autoselect  
(SA)  
X02  
0
8
4
555  
AA  
2AA  
55  
555  
90  
Sector Protect Verify  
1
Program  
Chip Erase  
Sector Erase  
4
6
6
555  
555  
555  
AA  
AA  
AA  
2AA  
2AA  
2AA  
55  
55  
55  
555  
555  
555  
A0  
80  
80  
PA  
555  
555  
PD  
AA  
AA  
2AA  
2AA  
55  
55  
555  
SA  
10  
30  
9
1
1
XXX  
XXX  
B0  
30  
Erase Suspend  
10  
Erase Resume  
LEGEND:  
X = Dpn’a Crꢂe  
RA = Addꢂeꢃꢃ pf ahe mempꢂꢄ lpcraipn ap be ꢂerd  
RD = Drar ꢂerd fꢂpm lpcraipn RA dsꢂing ꢂerd pꢁeꢂraipn  
PA = Addꢂeꢃꢃ pf ahe mempꢂꢄ lpcraipn ap be ꢁꢂpgꢂrmmed. Addꢂeꢃꢃeꢃ lrach pn ahe frlling edge pf ahe WE\ pꢂ CE\ ꢁslꢃe, ohicheveꢂ hrꢁꢁenꢃ lraeꢂ  
PD = Drar ap be ꢁꢂpgꢂrmmed ra lpcraipn PA. Drar lracheꢃ pn ahe ꢂiꢃing edge pf WE\ pꢂ CE\ ꢁslꢃe, ohicheveꢂ hrꢁꢁenꢃ fiꢂꢃa  
SA = Addꢂeꢃꢃ pf ahe ꢃecapꢂ ap be veꢂified (in rsapꢃeleca mpde) pꢂ eꢂrꢃed. Addꢂeꢃꢃ biaꢃ A±6-A±4 sniqselꢄ ꢃeleca rnꢄ ꢃecapꢂ.  
NOTES:  
±. See Trble ± fpꢂ deꢃcꢂiꢁaipn pf bsꢃ pꢁeꢂraipnꢃ.  
2. All vrlseꢃ rꢂe in hexrdecimrl.  
3. Exceꢁa ohen ꢂerding rꢂꢂrꢄ pꢂ rsapꢃeleca drar, rll cpmmrnd bsꢃ cꢄcleꢃ rꢂe oꢂiae pꢁeꢂraipnꢃ.  
4. Np snlpck pꢂ cpmmrnd cꢄcleꢃ ꢂeqsiꢂed ohen ꢂerding rꢂꢂrꢄ drar.  
5. The Reꢃea cpmmrnd iꢃ ꢂeqsiꢂed ap ꢂeasꢂn ap ꢂerding rꢂꢂrꢄ drar ohen device iꢃ in ahe rsapꢃeleca mpde, pꢂ if DQ5 gpeꢃ high (ohile ahe device iꢃ  
ꢁꢂpviding ꢃarasꢃ drar).  
6. The device rcceꢁaꢃ ahe ahꢂee-cꢄcle ꢂeꢃea cpmmrnd ꢃeqsence fpꢂ brckorꢂd cpmꢁraibiliaꢄ.  
7. The fpsꢂah cꢄcle pf ahe rsapꢃeleca cpmmrnd ꢃeqsence iꢃ r ꢂerd pꢁeꢂraipn.  
8. The drar iꢃ 00h fpꢂ rn snꢁꢂpaecaed ꢃecapꢂ rnd 0±h fpꢂ r ꢁꢂpaecaed ꢃecapꢂ. See “Asapꢃeleca Cpmmrnd Seqsence” fpꢂ mpꢂe infpꢂmraipn.  
9. The ꢃꢄꢃaem mrꢄ ꢂerd in npn-eꢂrꢃing ꢃecapꢂꢃ, pꢂ enaeꢂ ahe rsapꢃeleca mpde, ohen in ahe Eꢂrꢃe Ssꢃꢁend mpde. The Eꢂrꢃe Ssꢃꢁend cpmmrnd iꢃ vrlid  
pnlꢄ dsꢂing r ꢃecapꢂ eꢂrꢃe pꢁeꢂraipn.  
±0. The Eꢂrꢃe Reꢃsme cpmmrnd iꢃ vrlid pnlꢄ dsꢂing ahe Eꢂrꢃe Ssꢃꢁend mpde.  
AS29F010  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 2.3 12/08  
9
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