FLASH
AS29F010
Austin Semiconductor, Inc.
npn-ꢃsꢃꢁended ꢃecapꢂꢃ. The ꢃꢄꢃaem crn deaeꢂmine ahe ꢃarasꢃ ꢂeveꢂaꢃ ap ahe Eꢂrꢃe Ssꢃꢁend mpde, rnd iꢃ ꢂerdꢄ fpꢂ rnpaheꢂ
pf ahe ꢁꢂpgꢂrm pꢁeꢂraipn sꢃing ahe DQ7 pꢂ DQ6 ꢃarasꢃ biaꢃ, jsꢃa vrlid pꢁeꢂraipn. See “Asapꢃeleca Cpmmrnd Seqsence” fpꢂ mpꢂe
rꢃ in ahe ꢃarndrꢂd ꢁꢂpgꢂrm pꢁeꢂraipn. See “Wꢂiae Oꢁeꢂraipn infpꢂmraipn.
Sarasꢃ” fpꢂ mpꢂe infpꢂmraipn.
The ꢃꢄꢃaem msꢃa oꢂiae ahe Eꢂrꢃe Reꢃsme cpmmrnd
The ꢃꢄꢃaem mrꢄ rlꢃp oꢂiae ahe rsapꢃeleca cpmmrnd (rddꢂeꢃꢃ biaꢃ rꢂe “dpn’a crꢂe”) ap exia ahe eꢂrꢃe ꢃsꢃꢁend mpde
ꢃeqsence ohen ahe device iꢃ in ahe Eꢂrꢃe Ssꢃꢁend mpde. The rnd cpnainse ahe ꢃecapꢂ eꢂrꢃe pꢁeꢂraipn. Fsꢂaheꢂ oꢂiaeꢃ pf ahe
device rllpoꢃ ꢂerding rsapꢃeleca cpdeꢃ even ra rddꢂeꢃꢃeꢃ oiahin Reꢃsme cpmmrnd rꢂe ignpꢂed. Anpaheꢂ Eꢂrꢃe Ssꢃꢁend
eꢂrꢃing ꢃecapꢂꢃ, ꢃince ahe cpdeꢃ rꢂe npa ꢃapꢂed in ahe mempꢂꢄ cpmmrnd crn be oꢂiaaen rfaeꢂ ahe device hrꢃ ꢂeꢃsmed eꢂrꢃing.
rꢂꢂrꢄ. When ahe device exiaꢃ ahe rsapꢃeleca mpde, ahe device
TABLE 4: Command Definitions
2,3
Bus Cycles
Third
1
Command Sequence
First
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
RA RD
Second
Fourth
Fifth
Sixth
4
1
1
3
Read
5
6
XXXX F0
Reset
Reset
555
AA
2AA
55
555
F0
Manufacturer ID
Device ID
4
4
555
555
AA
AA
2AA
2AA
55
55
555
555
90
90
X00
X01
1
20
7
Autoselect
(SA)
X02
0
8
4
555
AA
2AA
55
555
90
Sector Protect Verify
1
Program
Chip Erase
Sector Erase
4
6
6
555
555
555
AA
AA
AA
2AA
2AA
2AA
55
55
55
555
555
555
A0
80
80
PA
555
555
PD
AA
AA
2AA
2AA
55
55
555
SA
10
30
9
1
1
XXX
XXX
B0
30
Erase Suspend
10
Erase Resume
LEGEND:
X = Dpn’a Crꢂe
RA = Addꢂeꢃꢃ pf ahe mempꢂꢄ lpcraipn ap be ꢂerd
RD = Drar ꢂerd fꢂpm lpcraipn RA dsꢂing ꢂerd pꢁeꢂraipn
PA = Addꢂeꢃꢃ pf ahe mempꢂꢄ lpcraipn ap be ꢁꢂpgꢂrmmed. Addꢂeꢃꢃeꢃ lrach pn ahe frlling edge pf ahe WE\ pꢂ CE\ ꢁslꢃe, ohicheveꢂ hrꢁꢁenꢃ lraeꢂ
PD = Drar ap be ꢁꢂpgꢂrmmed ra lpcraipn PA. Drar lracheꢃ pn ahe ꢂiꢃing edge pf WE\ pꢂ CE\ ꢁslꢃe, ohicheveꢂ hrꢁꢁenꢃ fiꢂꢃa
SA = Addꢂeꢃꢃ pf ahe ꢃecapꢂ ap be veꢂified (in rsapꢃeleca mpde) pꢂ eꢂrꢃed. Addꢂeꢃꢃ biaꢃ A±6-A±4 sniqselꢄ ꢃeleca rnꢄ ꢃecapꢂ.
NOTES:
±. See Trble ± fpꢂ deꢃcꢂiꢁaipn pf bsꢃ pꢁeꢂraipnꢃ.
2. All vrlseꢃ rꢂe in hexrdecimrl.
3. Exceꢁa ohen ꢂerding rꢂꢂrꢄ pꢂ rsapꢃeleca drar, rll cpmmrnd bsꢃ cꢄcleꢃ rꢂe oꢂiae pꢁeꢂraipnꢃ.
4. Np snlpck pꢂ cpmmrnd cꢄcleꢃ ꢂeqsiꢂed ohen ꢂerding rꢂꢂrꢄ drar.
5. The Reꢃea cpmmrnd iꢃ ꢂeqsiꢂed ap ꢂeasꢂn ap ꢂerding rꢂꢂrꢄ drar ohen device iꢃ in ahe rsapꢃeleca mpde, pꢂ if DQ5 gpeꢃ high (ohile ahe device iꢃ
ꢁꢂpviding ꢃarasꢃ drar).
6. The device rcceꢁaꢃ ahe ahꢂee-cꢄcle ꢂeꢃea cpmmrnd ꢃeqsence fpꢂ brckorꢂd cpmꢁraibiliaꢄ.
7. The fpsꢂah cꢄcle pf ahe rsapꢃeleca cpmmrnd ꢃeqsence iꢃ r ꢂerd pꢁeꢂraipn.
8. The drar iꢃ 00h fpꢂ rn snꢁꢂpaecaed ꢃecapꢂ rnd 0±h fpꢂ r ꢁꢂpaecaed ꢃecapꢂ. See “Asapꢃeleca Cpmmrnd Seqsence” fpꢂ mpꢂe infpꢂmraipn.
9. The ꢃꢄꢃaem mrꢄ ꢂerd in npn-eꢂrꢃing ꢃecapꢂꢃ, pꢂ enaeꢂ ahe rsapꢃeleca mpde, ohen in ahe Eꢂrꢃe Ssꢃꢁend mpde. The Eꢂrꢃe Ssꢃꢁend cpmmrnd iꢃ vrlid
pnlꢄ dsꢂing r ꢃecapꢂ eꢂrꢃe pꢁeꢂraipn.
±0. The Eꢂrꢃe Reꢃsme cpmmrnd iꢃ vrlid pnlꢄ dsꢂing ahe Eꢂrꢃe Ssꢃꢁend mpde.
AS29F010
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 2.3 12/08
9
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