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AS29F010DCG-150/883C 参数 Datasheet PDF下载

AS29F010DCG-150/883C图片预览
型号: AS29F010DCG-150/883C
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8 FLASH制服行业5.0V FLASH MEMORY [128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY]
分类和应用: 内存集成电路光电二极管
文件页数/大小: 26 页 / 521 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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FLASH  
AS29F010  
Austin Semiconductor, Inc.  
ERASE AND PROGRAMMING PERFORMANCE  
LIMITS  
1
2
TYP  
1.0  
7
MAX  
15  
UNIT  
PARAMETER  
COMMENTS  
4
Chip/Sector Erase Time  
sec  
Excludes 00h programming prior to erasure  
Byte Programming Time  
300  
µs  
5
Excludes system-level overhead  
3
0.9  
6.25  
sec  
Chip Programming Time  
NOTES:  
±. Tꢄꢁicrl ꢁꢂpgꢂrm rnd eꢂrꢃe aimeꢃ rꢃꢃsme ahe fpllpoing cpndiaipnꢃ: 25°C, 5.0V VCC, ± millipn cꢄcleꢃ. Addiaipnrllꢄ, ꢁꢂpgꢂrmming aꢄꢁicrlꢃ  
rꢃꢃsme checkeꢂbprꢂd ꢁraaeꢂn.  
2. Undeꢂ opꢂꢃa crꢃe cpndiaipnꢃ pf 90°C, VCC = 4.5V, ±00,000 cꢄcleꢃ.  
3. The aꢄꢁicrl chiꢁ ꢁꢂpgꢂrmming aime iꢃ cpnꢃideꢂrblꢄ leꢃꢃ ahrn ahe mrximsm chiꢁ ꢁꢂpgꢂrmming aime liꢃaed, ꢃince mpꢃa bꢄaeꢃ ꢁꢂpgꢂrm frꢃaeꢂ  
ahrn ahe mrximsm bꢄae ꢁꢂpgꢂrm aime liꢃaed. If ahe mrximsm bꢄae ꢁꢂpgꢂrm aime given iꢃ exceeded, pnlꢄ ahen dpeꢃ ahe device ꢃea DQ5 = ±.  
See ahe ꢃecaipn pn DQ5 fpꢂ fsꢂaheꢂ infpꢂmraipn.  
4. In ahe ꢁꢂe-ꢁꢂpgꢂrmming ꢃaeꢁ pf ahe Embedded Eꢂrꢃe rlgpꢂiahm, rll bꢄaeꢃ rꢂe ꢁꢂpgꢂrmmed ap 00h befpꢂe eꢂrꢃsꢂe.  
5. Sꢄꢃaem-level pveꢂherd iꢃ ahe aime ꢂeqsiꢂed ap execsae ahe fpsꢂ-bsꢃ-cꢄcle cpmmrnd ꢃeqsence fpꢂ ꢁꢂpgꢂrmming. See Trble 4 fpꢂ fsꢂaheꢂ  
infpꢂmraipn pn cpmmrnd definiaipnꢃ.  
6. The device hrꢃ r minimsm gsrꢂrnaeed eꢂrꢃe cꢄcle endsꢂrnce pf ± millipn cꢄcleꢃ.  
LATCHUP CHARACTERISTIC  
PARAMETER  
MIN  
MAX  
V + 1.0V  
CC  
Input voltage with respect to V on I/O pins  
-1.0V  
SS  
V
Current  
-100mA  
+100mA  
CC  
NOTES: Inclsdeꢃ rll ꢁinꢃ exceꢁa VCC  
.
Teꢃa cpndiaipnꢃ: VCC = 5.0V, pne ꢁin ra r aime.  
PIN CAPACITANCE  
PARAMETER  
CONDITIONS SYMBOL  
= 0  
MAX  
UNIT  
Input Capacitance  
V
C
15  
pF  
IN  
IN  
Output Capacitance  
V
= 0  
C
15  
15  
pF  
pF  
OUT  
OUT  
Control Pin Capacitance  
V
= 0  
C
IN2  
PP  
NOTES:  
±. Srmꢁled, npa ±00ꢀ aeꢃaed.  
2. Teꢃa cpndiaipnꢃ TA = 25°C, f = ±.0 MHz  
DATARETENTION  
PARAMETER  
CONDITIONS  
150°C  
MIN  
10  
20  
UNIT  
Years  
Years  
Minimum Pattern Data Retention Time  
125°C  
AS29F010  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 2.3 12/08  
19  
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